EPC技術文章

Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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基於氮化鎵元件的功率轉換解決方案著眼於下一代應用

宜普電源轉換公司(EPC)是增强型氮化鎵 (GaN) FET 和 IC產品的領導者,在紐倫堡舉行的 PCIM Europe 2023展會上分享了關於氮化鎵技術的發展和其應用的演示。 我們與該公司的聯合創始人暨首席執行長 Alex Lidow 就電力電子行業和氮化鎵技術對行業的影響進行了深度交流。

Electronic Design
2023年5月
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GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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Bi-directional power module for 48 V mild hybrid electric vehicles

An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN® FETs.

Power Electronics News
December, 2022
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GaN Power Behind Mild Hybrid Vehicle Electrification

With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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企業采訪 - 宜普電源轉換公司

Easy Engineering媒體採訪了宜普電源轉換公司(EPC)的市場行銷總監Renee Yawger,瞭解目前氮化鎵元件應用的情況和氮化鎵技術的未來。

Easy Engineering
2022年5月
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從氮化鎵元件的行為確定其性能的模型

氮化鎵場效應電晶體和積體電路的用戶現在有了一個工具來確定應用中需要的降額和降額設計中應考慮的因素。宜普公司開發了一個基于第一原理的物理模型,以解釋氮化鎵電晶體在硬開關時,導通電阻如何上升。本文提供了兩個同步整流應用實例的演示。

Electronic Specifier
2022年5月
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氮化鎵技術提高數據中心的功率密度

當數據中心的伺服器轉用48 V架構,氮化鎵電晶體可以替代目前的矽MOSFET元件,性能得以進一步提升和成本可以更低。

Data Center Dynamics
2022年3月
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High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
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面向e-Mobility應用的DC/DC參考設計

由氮化鎵技術專家 EPC 與 MPS 合作開發的雙向轉換器可實現97%的峰值效率。

EETimes
2022年2月
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Electrifying Power Hungry Loads

This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.

Electronics Today
December/January Edition
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Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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面向高功率密度應用的ePower晶片組系列被選爲Bodo‘s Power Systems“二月卓越產品”

EPC公司推出了100 V、65 A 集成電路晶片組,專爲48 V DC/DC轉換而設計,用於高密度計算應用,以及用於電動汽車、機器人和無人機的 48 V BLDC馬達控制器。EPC23101 eGaN IC配合EPC2302 eGaN FET成爲ePower晶片組,其最大耐受電壓爲 100 V,提供高達65 A的負載電流,開關速度大於1 MHz。

Bodo’s Power Systems
2022 年 2 月
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Power Bricks Get an Efficiency Boost with GaN

The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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應對用於超薄計算應用的超薄、具高功率密度的 48 V DC/DC 轉換器的電源和磁性設計挑戰

在過去十年中,計算機、顯示器、智能手機和其他消費電子系統變得更薄,同時功能也變得更强大。因此,市場對具有更高功率密度的更薄電源解决方案的需求不斷增加。本文研究了額定功率爲 250 W、超薄的48 V / 20 V轉換器,它可以採用各種非隔離型 DC/DC 降壓拓撲的可行性。我們研究了各種非隔離型拓撲的優缺點,從而瞭解拓撲如何影響功率電晶體和磁性元件的選擇,特別是電感器,因爲這兩個元件產生轉換器的大部分損耗。本文還詳細分析了爲這些應用設計薄型電感器所面對的挑戰,包括電感器損耗的因素、電感器尺寸和設計權衡,包括對EMI的影響。我們是以選擇、構建和測試了超薄多電平轉換器拓撲。從該轉換器獲得的實驗結果,用於進一步優化操作設置和元件的選擇,從而實現超過98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年9月
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採用 eGaN FET 的高效、高密度1/8 磚 1 kW LLC 諧振轉換器

隨著數據處理基礎設施的持續快速增長,市場要求在最小的佔板面積內提供更高的功率。

Power Systems Design
2021年9月
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Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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GaN for High Density Servers

Gallium nitride (GaN) devices offer performance in a small form factor, increasing the efficiency, and reducing the system cost for 48 V power conversion applications. They have been adopted in high volumes in high density computing, as well as many new automotive power system designs.

Electronic Specifier
February, 2021
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