本文介紹了基於氮化鎵元件、具有120 VDC輸入電壓、工作頻率爲 6.7 MHz 的兩相 DC/DC轉換器。 120 VDC 是國際太空站 (ISS) 二次電路系統中的標準電壓水平。

使用具備高功率密度和開關超快等優勢的GaN FET ，Tell-I 公司新開發的 SDK 電路板使用兩相來超越正常的開關速度。 多相配置支持用於 ISS 等系統的標準120-V 匯流排電壓，讓交錯轉換器在 3 MHz、5 MHz 和 6.87 MHz 下實現高效開關。使用四個 EPC2019 GaN FET和支持小型閘極驅動及功率迴路的兩個 LMG1210 閘極驅動器，可實現最佳和緊凑的佈局。

Power Electronics News
2022年4月
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The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive applications such as industrial drones, e-bikes, scooters, power tools.

Bodo’s Power Systems
April, 2022
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以碳化矽(SiC)、氮化鎵(GaN)材料為主流的寬能隙(WBG)半導體功率元件，在節能永續意識抬頭的今日成為各種電源系統應用的寵兒；2022年Tech Taipei系列研討會首度以WBG元件為題，邀請業界重量級業者，從設計、製造、測試等不同面向與現場超過400位聽眾分享最新技術與應用趨勢...

EE Times Taiwan
2022年3月
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當數據中心的伺服器轉用48 V架構，氮化鎵電晶體可以替代目前的矽MOSFET元件，性能得以進一步提升和成本可以更低。

Data Center Dynamics
2022年3月
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Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
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The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

Robotics Tomorrow
March, 2022
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我們將在本文討論客戶爲何遲遲未採用氮化鎵技術的一些最常見原因，氮化鎵技術顯然是較舊的矽基功率MOSFET的替代技術。在不深入詳細研究統計數據的情况下，按最常發生推導出一系列原因，並理解某些應用比其他應用更側重氮化鎵技術的某些特性。我們的討論僅限於額定電壓低於400 V的元件，因爲這是EPC公司的氮化鎵場效應電晶體和積體電路的重點應用。

PSD功率系統設計
2022 年3月
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由氮化鎵技術專家 EPC 與 MPS 合作開發的雙向轉換器可實現97%的峰值效率。

EETimes
2022年2月
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A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.

Power Electronics Tips
February, 2022
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This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.

Electronics Today
December/January Edition
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Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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EPC公司推出了100 V、65 A 集成電路晶片組，專爲48 V DC/DC轉換而設計，用於高密度計算應用，以及用於電動汽車、機器人和無人機的 48 V BLDC馬達控制器。EPC23101 eGaN IC配合EPC2302 eGaN FET成爲ePower晶片組，其最大耐受電壓爲 100 V，提供高達65 A的負載電流，開關速度大於1 MHz。

Bodo’s Power Systems
2022 年 2 月
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The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.

Energies Journal
October, 2021
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Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.

All About Circuits
October, 2021
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The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.

EEPower
October, 2021
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The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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