專為高效電源轉換而設的氮化鎵功率電晶體已經投產7年多了。全新的市場例如雷射雷達、波峰追蹤及無線電源，都成為氮化鎵的新興市場，因為氮化鎵具備超高速的的開關速度。這些市場使得氮化鎵產品得以量產、成本更低及具備優越的可靠性。這些優勢為比較保守的設計工程師提供更大的利好條件，因此，DC/DC轉換器工程師、AC/DC轉換器及車載應用工程師都開始對氮化鎵器件進行評估。要把120億美元的矽基MOSFET市場轉為氮化鎵市場，還有什麼壁壘呢？就是信心的問題。設計工程師、製造工程師、採購經理及管理層都必需對氮化鎵技術的優勢有足夠的信心、相信氮化鎵技術可以解決設計師對採用全新技術的風險的疑問。讓我們看看3個主要構成風險的因素：供應鏈、成本及產品的可靠性。

IEEE Spectrum
閱讀文章

當全自動車輛及電力推進系統成為車載應用發展的推動力，在矽基板上生成氮化鎵的功率元件的龐大新興市場正逐漸崛起。

Design World
閱讀文章

從2010年開始，自矽基氮化鎵（GaN）電晶體商用化後，低壓氮化鎵電晶體推動了很多全新應用的發展。氮化鎵元件具備超快速開關，推動全新市場諸如雷射雷達、波峰追蹤及無線電源市場的出現。這些全新應用進一步實現更強大的供應鏈、低製造成本及元件前所未有的高可靠性。這些優勢使得比較保守的設計工程師在DC/DC轉換器、AC/DC轉換器及車載等各種應用開始對氮化鎵元件進行評估。在本文章系列，我們將討論多種發揮氮化鎵元件優勢的應用，實現最終產品差異化的競爭優勢。首先，我們會探討是甚麼因素加快了氮化鎵元件的普及。

Power Systems Design
閱讀文章

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
Read article

GaN power element technology has found its way into a major application in the industry with the release of the Dell Latitude computer using the AirFuel standard.

Planet Analog
July 19, 2017
Read article

Max Smolaks歡迎於電源鏈(power chain)即將替代矽材料的全新氮化鎵材料。

在過去的35年裡，電源供電一直採用功率金屬氧化物半導體場效應電晶體(MOSFET) –利用電壓受控的矽元件進行開關及利用電場允許或阻止電流的流通。

Data Center Dynamics
2017年4月19日
閱讀文章

參看EPC公司於APEC 2017展出基於氮化鎵技術的各種應用。

EDN Network
2017年4月3日
閱讀全文

於2017年APEC研討會上，宜普電源轉換公司（EPC）展示出採用氮化鎵(eGaN)技術的各種應用以證明它即將改變我們的生活方式。

Electronics360
2017年3月29日
閱讀全文

人們用矽材料命名了“矽谷”，而矽材料現正面對全新並具有潛力的競爭對手 - 氮化鎵（GaN）材料。有說氮化鎵元件可以取得300億美元的半導體電源供應產業的市場份額。這個市場涵蓋了所有利用牆上的電源插座取得電源的產品—從Apple（AAPL）的iPhone充電器，以至Tesla（TSLA）的豪華電動汽車。

Investor's Business Daily
Allison Gatlin
2016年7月
閱讀全文

Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977.

His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the company’s new, improved form of GaN.

Barron's
Tiernan Ray
June 29, 2016
Read article

There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.

Power Systems Design
By: Dr. John Glaser & Dr. David Reusch, Efficient Power Conversion
June 13, 2016
Read article

ANDOVER, Mass.—At the front door of Raytheon's Integrated Air Defense Center, there's a reminder of how big microwave electronics used to be—the original microwave oven. The now ever-present kitchen device was invented after a Raytheon engineer discovered his candy bar melted while he was standing near a magnetron used in a radar system the company was developing. Nearly the size of a refrigerator, the original microwave looks like it would cook a whole lot more than whatever was put within its metal grate, which was meant to contain the microwaves from its magnetron.

Ars Technica
June 9, 2016
Read article

Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
Read article

由於PAPR比率在5G技術中會變差，氮化鎵(eGaN)技術被認爲是支持5G技術的基站結構在功效方面的最重要解決方案，而氮化鎵功率電晶體已經實現了波峰跟蹤應用，我們並預期在未來的3至5年之間，當氮化鎵技術繼續發展，市場將會有更多的新興應用陸續出現。

EDN
Steve Taranovich
2015年7月17日
閱讀文章

EPC garners the attention of MIT Technology Review with its new products targeted for wireless charging applications. Recognizing EPC as a catalyst for jump-starting the market for wireless power systems, the author highlights the need for universally accepted technology standards. He reinforces his position quoting Alex Lidow saying that “…convenience, cost, and efficiency” are all factors needed for broad adoption of any standard…

MIT Technology Review
July 15, 2015
Read article

功率轉換需要製造細小的元件以從電力的一種形式轉換至另外的一種形式，從而使得所有電子設備運行順暢。 直至目前爲止，矽元件是功率轉換的首選元件，但是當它的效率達到極限時，業界轉而關注全新材料的發展。

Los Angeles Business Journal
2015年6月21日
閱讀文章

Last week, El Segundo, Calif.-based Efficient Power Conversion, announced that its offering two types of power transistors made from gallium nitride that it has priced cheaper than their silicon counterparts. “This is the first time that something has really been higher performance and lower cost than silicon,” CEO Alex Lidow says. “Gallium nitride has taken the torch and is now running with it.”

IEEE Spectrum
May 8, 2015
Read article

半導體業界資深人士及宜普電源轉換公司（EPC）首席執行長Alex Lidow說：「摩爾定律現正蛻變為預測全新的半導體材料的性能定律。EPC氮化鎵（GaN）電晶體有機會替代矽元件。氮化鎵材料是一種更好的電子導體，在性能及功效方面比矽更為優越。」氮化鎵元件已經用於電源轉換及無線通訊等領域，它將有一天成為數位晶片。Lidow說：「60年以來首次出現採用優越材料的元件而不只是在更小尺寸方面發展。」

閱讀文章
Network World
2015年4月17日

晶片的發展推動了一個又一個的技術大變革：個人電腦、互聯網、智慧手機、智慧手錶及即將推出的自動駕駛汽車。 宜普電源轉換公司（EPC）是一間把它的將來押注在III-V氮化鎵材料上的創始公司，其首席執行長Alex Lidow帶領著一支34人的專業團隊創建公司。該公司的業績繼續保持穩定增長，產品是採用III-V氮化鎵（GaN）材料層的電晶體。 在2016或2017年，Lidow預計氮化鎵元件的製程可以包含電腦處理器內負責思考的邏輯電路。Lidow認為「與傳統的矽元件相比，氮化鎵元件所具備的電力特性使你立即可以取得1000倍改進產品性能的機會。」

閱讀文章
CNET.com
2015年4月17日

Dean Takahashi at VentureBeat profiles Alex Lidow. Silicon chips have had a decades-long run as the foundation for modern electronics. But a new kind of chip, based on the compound material gallium nitride (GaN), promises to unseat silicon because it has higher performance, less power consumption, and lower cost.

Read article
VentureBeat
April 2, 2015