EPC技術文章

How to GaN: Improving Electrical and Thermal Performance

In this installment of the ‘How to GaN’ series we will discuss the 4th generation of eGaN FETs in 48 VIN applications and evaluate the thermal performance of the chipscale packaging of high voltage lateral eGaN FETs.

EEWeb
By: Alex Lidow
December, 2014

Profiles in Design: Alex Lidow, Ph.D.

DesignCon 2015’s Thursday (January 29th) keynote speaker will be Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation (EPC). For most of his career, Alex has focused on improving the efficiency of power conversion in hopes of reducing the environmental impact of energy production and consumption. As an R&D engineer at International Rectifier, he co-invented the HEXFET power MOSFET. The patents from this invention brought in more than $900M. Alex holds numerous additional patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. He recently co-authored the first textbook on GaN transistors, “GaN Transistors for Efficient Power Conversion”. You can catch Alex’s keynote speech at DesignCon 2015 on Thursday, January 29, 12:00 PM – 12:30 PM.

EDN
December 3, 2014
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How to GaN: Generation 4 eGaN FETs – Widening the Performance Gap with the Aging MOSFET

In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

WiGaN: 利用氮化鎵場效應電晶體(eGaN FET)支持在高頻工作的硬開關轉換器應用

本章展示在10 MHz频率開關、採用氮化鎵場效應電晶體的硬開關降壓轉換器的結果及提供轉換器功耗的細數。此外,我們將展示採用氮化鎵場效應電晶體的轉換器目前所取得無可匹敵的高頻性能及如果要推動器件工作在更高頻率時所面對的限制。

EEWeb
作者:Alex Lidow
2014年8月

如何使用氮化鎵器件:採用DrGaNPLUS簡化設計及提高效率

本章將討論我們設計的氮化鎵場效應電晶體(eGaN®FET)模組使得電源轉換系統設計師很容易可對具超卓性能的氮化鎵電晶體進行評估

EEWeb
作者:Alex Lidow
2014年6月

如何使用氮化鎵:支援高頻開關的氮化鎵場效應電晶體(eGaN® FET)

本章我們回到討論硬開關轉換器,但不同的是電晶體在更高頻率的條件下工作,超越矽技術的實際限制。

EEWeb
作者: Alex Lidow
2013年12月

如何使用氮化鎵:在硬開關中間匯流排轉換器使用氮化鎵場效應電晶體(eGaN FET)

我們在本章討論在隔離型直流-直流功率轉換中使用更複雜的硬開關轉換器。

EEWeb
作者:Alex Lidow
2013年10月

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