當矽技術已經到了性能極限，採用氮化鎵元件的全新設計使得氮化鎵技術得以繼續普及。氮化鎵元件的發展還是剛剛起步，它的性能將得以繼續提升、積體電路也將會更具優勢，以及將有更多全新的氮化鎵產品推出市場。

Electronics Weekly
2019年12月
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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氮化鎵（GaN）及碳化矽（SiC）元件的價格下調，對客戶而言，更為吸引。多家供應商推出基於氮化鎵及碳化矽的功率半導體，摩拳擦掌，正在爆發新一輪的半導體大戰，全速進攻傳統矽基元件的市場份額。

Semiconductor Engineering
2019年10月
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氮化鎵技術為業界實現以前不可能達到的目標。EPC公司的Alex Lidow闡析醫療護理如何更好地利用氮化鎵技術，實現重大的改進。

Electronic Specifier
2019年8月
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GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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宜普電源轉換公司的基於氮化鎵的元件乃前沿技術。在本影片，宜普公司的首席執行長Alex Lidow於APEC展會現場與 Alix Paultre分享多個design in項目，從而展示基於氮化鎵的元件的各種優勢。

Embedded Computer Design
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宜普電源轉換公司首席執行長兼共同創辦人Alex Lidow於APEC 2019展覽會的Ridley Engineering展覽攤位進行演講，題目是“矽已經死亡”。

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In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN^® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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專為高效電源轉換而設的氮化鎵功率電晶體已經投產7年多了。全新的市場例如雷射雷達、波峰追蹤及無線電源，都成為氮化鎵的新興市場，因為氮化鎵具備超高速的的開關速度。這些市場使得氮化鎵產品得以量產、成本更低及具備優越的可靠性。這些優勢為比較保守的設計工程師提供更大的利好條件，因此，DC/DC轉換器工程師、AC/DC轉換器及車載應用工程師都開始對氮化鎵器件進行評估。要把120億美元的矽基MOSFET市場轉為氮化鎵市場，還有什麼壁壘呢？就是信心的問題。設計工程師、製造工程師、採購經理及管理層都必需對氮化鎵技術的優勢有足夠的信心、相信氮化鎵技術可以解決設計師對採用全新技術的風險的疑問。讓我們看看3個主要構成風險的因素：供應鏈、成本及產品的可靠性。

IEEE Spectrum
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eGaN FET（及目前的積體電路）之可以應用於全自動車輛的雷射雷達系統，以及全自動電動賽車，是因為這些元件可以實現高很多的解析度（由於具備超短雷射脈衝）、更快速的圖像速度（由於短雷射脈衝），及可以準確地看得更遠（由於在超高電流時可以實現快速雷射脈衝）。

Planet Analog
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For LiDAR systems to meet ever-higher performance specs, they must perform fast switching of high-current pulses, which is where a gallium-nitride power switch can step in to help.

Electronic Design
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LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN^® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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Wireless power charging was a big point of discussion with a number of different solutions on the APEC 2018 exhibit floor. The following wireless charging solutions had unique aspects in their strategies; let’s take a look at what I saw over the last few days.

EDN Network
By Steve Taranovich
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In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

Power Electronics News
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