在超過四十年中，隨著功率MOSFET元件的結構、技術和電路拓撲的創新，可滿足不斷增長的電力需求，因此改善了電源管理的效率和成本。 然而，在這新世紀的發展，隨著矽功率MOSFET元件已經接近其理論極限，其改進速度已大為減慢。 與此同時，一種全新材料 - 氮化鎵（GaN）- 正朝著新的理論性能領域的方向，穩步發展，其性能是老化的MOSFET元件的6,000倍，以及是目前市場的最優越GaN元件的300倍。

EETimes
2020年6月
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Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Bodo’s Power Systems
May, 2020
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Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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中壓氮化鎵場效應電晶體（eGaN FET）的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時，EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢，積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構，也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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矽功率MOSFE追不上目前功率電子業界的演進步伐 -- 業界需要具備高效、高功率密度及細小的外型尺寸的元件。業界看到矽MOSFET已經達到它的理論極限，從而需要找出全新元件。氮化鎵（GaN）是一種HEMT元件，具備附加增值的優勢，被證明為可以支持全新應用的要求。

Power Electronics News
2020年3月25日
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A recent design for an ultra-high speed, low-impedance pulse generator to evaluate oscilloscope probe performance and for determining the feasibility of an in-socket load for ASIC emulation using EPC eGaN™ FET, EPC2037 reveals just how fast these power devices are.

Signal Integrity
March 12, 2020
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從2010年3月起，氮化鎵（GaN）功率元件已經實現高可靠性並進行量產。本章詳細闡析如何測試出元件在何時開始失效，從而瞭解數據手冊給出的元件工作條件，距離其工作極限值還有多少餘量。而最重要的是，找出元件固有的失效機理，瞭解其失效的根本原因、恒常操作情況、溫度、電氣應力或機械應力等，從而知道產品在一般工作條件下，它的安全使用壽命。

Power Systems Design
2020年3月
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知名企業領袖 - 宜普電源轉換公司（EPC）首席執行官Alex Lidow於2009年在市場推出第一個氮化鎵電晶體。 經過了10年的氮化鎵產品銷售，DESIGN & ELEKTRONIK 雜誌編輯Ralf Higgelke與Alex會面並談論氮化鎵技術的最新發展。

DESIGN & ELEKTRONIK雜誌
2020年2月20日
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當矽技術已經到了性能極限，採用氮化鎵元件的全新設計使得氮化鎵技術得以繼續普及。氮化鎵元件的發展還是剛剛起步，它的性能將得以繼續提升、積體電路也將會更具優勢，以及將有更多全新的氮化鎵產品推出市場。

Electronics Weekly
2019年12月
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Smaller, faster, lower cost, and more integrated, GaN-on-Silicon devices have the confidence of designers across a spectrum of power conversion applications. In this article, Alex Lidow explains why it’s getting harder to avoid using GaN power transistors and ICs.

Electronic Specifier
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宜普電源轉換公司首席執行長Alex Lidow 在是次硏討會討論氮化鎵技術如何大大改善系統的效率、尺寸及成本，從而加快磁共振及AirFuel共振技術的普及。

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It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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氮化鎵（GaN）及碳化矽（SiC）元件的價格下調，對客戶而言，更為吸引。多家供應商推出基於氮化鎵及碳化矽的功率半導體，摩拳擦掌，正在爆發新一輪的半導體大戰，全速進攻傳統矽基元件的市場份額。

Semiconductor Engineering
2019年10月
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氮化鎵技術為業界實現以前不可能達到的目標。EPC公司的Alex Lidow闡析醫療護理如何更好地利用氮化鎵技術，實現重大的改進。

Electronic Specifier
2019年8月
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