Efficient Power Conversion Corporation (EPC) is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF transmission, solar micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC was founded in November 2007 by three engineers with a combined 60 years experience in advanced power management devices.
EPC’s CEO, Alex Lidow, is the co-inventor of the HEXFET® power MOSFET and, in addition to holding positions in R&D and manufacturing, was the CEO of International Rectifier for 12 years. For over 35 years it has been Alex Lidow’s mission to create new semiconductors that improve our ability to efficiently convert and use energy.
At the time of the founding of EPC, it became clear to the three founders that silicon had reached performance limits. At that time, a possible candidate to displace silicon was gallium nitride, but there were significant problems in cost and device capability. The initial EPC team vowed to develop GaN products that could be used as cost effective power MOSFET replacements which would require innovation in manufacturing, material science, and applying device physics.
In June 2009, EPC delivered the first commercial enhancement mode GaN transistors (eGaN®) that were manufactured in a low-cost foundry in Taiwan used to produce standard silicon CMOS product.
With this milestone reached, EPC, and the entire power management industry, has begun a new journey that holds great promise for a step function of new value added possibilities for the users.
In those applications where greater efficiency, less space, or operation at much higher frequencies is needed, eGaN FETs will quickly displace traditional power MOSFETs. And, EPC as the first to introduce eGaN FETs to the market, will continue to lead the way in the development of eGaN FETs that will provide power system design engineers the performance that cannot be obtained with silicon power MOSFETs.