The EPC9194 GaN-based inverter reference design significantly enhances motor drive system efficiency, range, and torque, while more than doubling power per weight. The inverter’s extremely compact size allows seamless integration into the motor housing resulting in the lowest electromagnetic interference (EMI,) highest density, and lowest weight.

EL SEGUNDO, Calif.— October, 2023 — EPC announces the availability of the EPC9194, a

The EPC9159 is a 1 kW, 48 V/ 12 V, LLC converter in a tiny 17.5 mm x 22.8 mm footprint for state-of-the-art power density of 5130 W/in³. 

EL SEGUNDO, Calif.— September 2023 — EPC announces the availability of the EPC9159, a 48 V / 12 V, LLC converter designed for high-density 48 V server power and DC-DC converters. This reference design can deliver 1 kW of power in a tiny 17.5 mm x 22.8 mm footprint for a power density of 5130 W/cm³. This is achieved by employing gallium nitride (GaN) power switches operating at high switching frequencies in both the primary and secondary circuits.

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 A_Pulsed, rad-hard GaN FET in a small 7 mm² footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

On July 3^rd, 2023, China’s Ministry of Commerce announced it would put in place certain restrictions on the exporting of gallium and germanium, among other materials, starting in August of this year. EPC’s wafer technology is ‘GaN-on-Si’, although the amount of gallium in each device is miniscule. There are significant sources of gallium available worldwide and EPC’s needs are relatively small, we expect no short or long-term interruption of supply.

Case Spotlights Next-Gen Tech Replacing Silicon

(El Segundo, California)—Efficient Power Conversion Corporation (EPC), the global leader in gallium nitride (GaN) technology, today filed complaints in federal court and in the U.S. International Trade Commission (ITC) asserting four patents of its foundational patent portfolio against Innoscience (Zhuhai) Technology Company, Ltd. and its affiliates (collectively, Innoscience).  These patents cover core aspects of the design and manufacturing process of EPC’s proprietary enhancement-mode gallium nitride power semiconductor devices.  These patents encompass innovations that enabled GaN-based power devices to mature from a research project to a mass-producible high-volume alternative to silicon-based transistors and integrated circuits with GaN devices having higher efficiency, smaller size, and lower cost. 

The EPC9186 GaN-based inverter reference design enhances motor system performance, range, precision, and torque for high power applications.

EL SEGUNDO, Calif.— May, 2023 — EPC announces the availability of the EPC9186, a 3-phase BLDC motor drive inverter using the EPC2302 eGaN^® FET. The EPC9186 supports a wide input DC voltage ranging from 14 V to 80 V. The high-power capability of the EPC9186 supports applications such as electric scooters, small electric vehicles, agricultural machinery, forklifts, and high-power drones.

EPC and Analog Devices introduce a reference design using a new Analog controller fully optimized to drive EPC GaN FETs and achieving greater than 96.5% efficiency.

EL SEGUNDO, Calif.— July, 2022 — EPC announces the availability of the EPC9158, a dual output synchronous buck converter reference design board operating at 500 kHz switching frequency that converts an input voltage of 48 V - 54 V to a regulated 12 V output and delivers up to 25 A per phase or 50 A total continuous current. The combination of the new Analog LTC7890 synchronous GaN buck controller with ultra-efficient GaN FETs from EPC enables a highly efficient solution in a small footprint for high power density applications. The solution achieves 96.5% efficient at 48 V to 12 V and 50 A continuous current.

EPC’s GaN Experts will be available during PCIM Europe 2023, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — April 2023 — — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations on GaN technology and showcasing applications at PCIM Europe 2023 in Nuremburg, 09 – 11 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN^® FETs and ICs in a large variety of customer end products in Hall 9, Stand 318.

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 A_Pulsed, rad-hard GaN FET in a small 12 mm² footprint. The EPC7003 is a 100 V, 30 mΩ, 42 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

Efficient Power Conversion (EPC) publishes Phase-15 Reliability Report adding to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2023 — EPC announces the publication of its Phase-15 Reliability Report, documenting continued work using test-to-fail methodology and adding specific reliability metrics and predictions for real world applications including solar optimizers, lidar sensors, and DC-DC converters.

Efficient Power Conversion (EPC) expands its family of footprint compatible ePower™ Stage ICs to boost power density and simplify design for different power requirements in DC-DC applications, motor drives, and class-d audio amplifiers.

EL SEGUNDO, Calif.— March 2023 — EPC announces the introduction of two new 100 V power stage ICs rated at 15 A (EPC23104) and 25 A (EPC23103). The two devices join the 100 V 35 A power stage IC EPC23102 offered by EPC.

EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

EPC’s GaN Experts will be available during APEC, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — March 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations at the premier power electronics conference; the IEEE Applied Power Electronics Conference and Exposition (APEC 2023) in Orlando from March 19^th through the 23^rd (see detailed schedule below).  In addition, the company will demonstrate it’s latest generation of eGaN^® FETs and ICs in applications ranging from high-power density computing, eMobility, robotics, solar power, battery charging, and more in booth # 732 in the Orange County Convention Center.  Stop by to see the ‘Wall of GaN’ – the broadest portfolio of GaN power semiconductors in the market available for off-the-shelf delivery.

EPC introduces the EPC9177, an eGaN^® IC-based reference design for high power density, low profile DC-DC converters to address new USB PD 3.1 stringent demands for multiport chargers and on-motherboard DC-DC converting 28 V – 48 V input to 12 V or 20 V output.

EL SEGUNDO, Calif.—  February, 2023 — EPC announces the availability of the EPC9177, a digitally-controlled, single-output synchronous buck converter reference design board operating at 720 kHz switching frequency converting an input voltage of 48 V, 36 V, 28 V to a regulated 12 V output voltage and delivering up to 20 A continuous output current.

Efficient Power Conversion (EPC) introduces the 200 V, 10 mΩ EPC2307 that completes a family of six GaN transistors rated at 100V, 150V, and 200V, offering higher performance, smaller solution size, and ease of design for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— January 2023 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 200 V, 10 mΩ EPC2307 in a thermally enhanced QFN in a tiny 3 mm x 5 mm footprint.

EPC introduces the 80 V, AEC-Q101-qualified EPC2252 GaN FET, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive-grade lidar, 48 V – 12 V DC-DC conversion, and low inductance motor drives.

EL SEGUNDO, Calif. — January 2023 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80 V, 11 mΩ EPC2252 that delivers 75 A pulsed current in a 1.5 mm x 1.5 mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48  V – 12 V DC-DC conversion, and low inductance motor drives.

Efficient Power Conversion (EPC) introduces EPC21701, an 80 V laser driver IC capable of 15 A pulsed current for time-of-flight (ToF) lidar applications including vacuum cleaners, robotics, 3D security cameras and 3D sensing. 

EL SEGUNDO, Calif.— January 2023 — EPC announces the introduction of the EPC21701, a laser driver that monolithically integrates an 80 V, 40 A FET with gate driver and 3.3 logic level input into a single chip for time-of-flight lidar systems used in robotics, surveillance systems, and vacuum cleaners. It is tailored to lidar systems for gesture recognition, time of flight (ToF) measurement, robotic vision, or industrial safety.

EPC and Richtek introduce a reference design that achieves greater than 98% efficiency using the RT6190 buck boost controller and EPC2204 EPC GaN FETs

EL SEGUNDO, Calif.—  January 2023 — EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V - 24 V to a regulated 5 V - 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek RT6190 controller with ultra-efficient EPC2204 GaN FETs from EPC shrinks the solution size by greater than 20% compared to traditional solutions for high-power density applications.  The solution achieves greater than 98% efficiency for 20 V and 12 V output voltage and can operate without heatsink with maximum rise temperature below 15 degC for 20 V to 5 V, and 55 degC for 12 V to 20 V, at 5 A continuous current.

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.