Application Briefs

GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.

Find out more about applications using EPC eGaN® technology by reading the application briefs listed below:

eGaN® FETs and ICs for Wireless Power Applications (AB001)

Wireless energy transfer enables the remote powering and charging of the myriad of battery-powered devices that have infiltrated our daily lives.

eGaN FETs and ICs for Envelope Tracking Applications (AB002)

Envelope tracking is a power supply technique for improving the energy efficiency of Radio Frequency Power Amplifiers by precisely tracking the power demand, as compared to today’s fixed-power systems. In cell phones use of envelope tracking means longer talk time, and in base stations it means smaller, less expensive amplifiers that consume far less energy and are less expensive to operate.

eGaN FETs and ICs for Class-D Audio Applications (AB003)한국어 버전

The quality of sound reproduced by the audio amplifier, measured by THD (Total Harmonic Distortion), DF (damping factor), and IMD (intermodulation distortion) is influenced by the characteristics of the power transistors used.

eGaN FETs and ICs for LiDAR (AB005)

LiDAR (Light Distancing and Ranging) uses pulsed lasers to rapidly create a three dimensional image or map of a surrounding area.

eGaN FETs and ICs for Networking Point of Load Converters (AB006)

The continually increasing demand for small, high efficiency, high speed response point of load converters is driving demand for faster, more efficient power switches.

eGaN FETs and ICs for Augmented Reality (AB008)

LiDAR (Light Distancing and Ranging) is used in augmented reality to create a three dimensional image or map of a surrounding area.

eGaN FETs and ICs for 48 V Buck Converters (AB009)

Data centers consume vast amounts of electrical energy. Operating power for these centers runs from megawatts to tens of megawatts. Power conversion design today in the data center is focused on improving energy efficiency and reducing operation costs.

eGaN FETs and ICs for Medical Technology (AB010)

Resolution is a critical attribute of all medical imaging devices, such as sonograms, CAT scans, and MRI. eGaN FETs and ICs increase the speed and precision with which imaging equipment can conduct scanning measurements. The small size and efficiency of eGaN® FETs improves resolution of data collected, while lowering operating power resulting in faster imagery.

eGaN FETs and ICs for DC-DC Conversion (AB013)한국어 버전

The smallest, most cost effective and highest efficiency non-isolated 48 V – 12 V converter, suitable for high-performance computing and telecommunication applications, can be achieved by employing eGaN FETs such as the EPC2045.

eGaN FETs and ICs for Hi-Rel Power Solutions (AB015)

Power converters used in harsh environments, such as space, high altitude flight, or high reliability military applications must be resistant to damage or malfunctions caused by radiation.

eGaN FETs and ICs for Automotive DC-DC Applications (AB016)한국어 버전

Automotive electronics can now take full advantage of the improved efficiency, speed, smaller size, and lower cost of enhancement-mode gallium nitride (eGaN) devices. Already, several large applications where GaN has significant advantages over the aging silicon MOSFET have emerged, particularly at the 48 V input node.

eGaN FETs and ICs for Brushless DC (BLDC) Motors (AB017)한국어 버전

Key applications including e-mobility, cobots and robots, DC servo drives, drones, and automotive use GaN devices to enable smaller, lighter, and more precise motor drives.

eGaN FETs and ICs for Drones (AB018)한국어 버전

GaN technology offers a highly efficient solution for multiple applications used in industrial drones. GaN can improve the performance, shrink the size and weight, and save costs for motor drives, DC-DC power supplies, and lidar/time of flight systems used in industrial drones and UAVs.

eGaN FETs and ICs for USB-C PD Quick Chargers (AB019)

USB-C PD quick chargers and adaptors for smart phones and laptops require the highest power density for fast charging and small size. eGaN FETs and ICs enable miniaturization, very high efficiency, and excellent thermal characteristics.

eGaN FETs and ICs for Synchronous Rectification (AB020)

Key applications including Synchronous Rectification, AC/DC for multi-kW Servers, Netcom and Telecom systems, Adaptors and SMPS for LED and OLED TV, home theater systems, gaming & graphic PCs, Computing, LED lighting

eGaN FETs and ICs for 1 kW – 3 kW Universal Input Power Factor Correction (PFC) (AB021)

Why GaN for PFC? High efficiency (greater than 99%), Small size, Low harmonic distortion, 4-level flying capacitor multi-level (FCML) totem-pole bridgeless PFC topology utilizes 200 V GaN devices

Wireless power applications
Envelope tracking applications
LiDAR applications
Data center power applications
Motor Drive Applications