Gallium Nitride FET-based power conversion systems offer higher efficiency, increased power density, and lower overall system cost than silicon based alternatives. These advantageous characteristics have spurred the presence of an ever increasing ecosystem of power electronics components such as gate drivers, controllers, and passive components that specifically enhance eGaN FET performance.
Semiconductor suppliers such as uPI Semiconductor, Texas Instruments and Microchip, continue to release drivers and controllers to meet the growing demand for GaN based designs.
Below is a list of existing IC’s compatible with eGaN FETs: