GaN FETs and ICs are the dominant technology in LiDAR (Light Detection and Ranging) applications due to their high-frequency operation, which enables faster laser pulse modulation. Their ability to handle high-current with minimal losses is critical for improving accuracy and increasing range in lidar systems. GaN's efficiency and power density advantages result in smaller, lighter lidar systems, resulting in better solutions for automotive, security, robotics, drones, and aerospace applications.