Events

Wurth Power Days 2024

Location: Boxborough, Massachusetts

Tuesday, October 22, 2024

A free, local, seminar put together with Würth Elektronik, EPC, Keysight and NWS. Expert talks and hand-on demonstrations.

EPC Sessions

1. Keynote: The Future of Untethered Robotics: GaN-Powered Solutions for Mobility, AI, and Machine Vision (Alex Lidow, CEO)

As the frontier of robotics rapidly advances, untethered systems are emerging and transforming industries from manufacturing to healthcare. In this keynote, we will explore how gallium nitride (GaN) technology is revolutionizing the future of untethered robotics, enhancing mobility, AI capabilities, and machine vision.

2. Optimizing PCB layout, to take advantage of EPC GaN FETs and WE inductors (Brian Miller, Field Applications Engineer)

This presentation explores strategies for optimizing PCB layouts to maximize the performance of EPC’s GaN FETs and Wurth inductors. Key topics include minimizing parasitic inductance and resistance, improving thermal management, and enhancing efficiency and power density, showcasing how these advanced components drive innovation in power electronics.

3. Advantages of EPC’s GaN FETs and Wurth inductors in motor drive designs (Brian Miller, Field Applications Engineer)

This presentation explores the benefits of integrating EPC’s GaN FETs and Wurth inductors in motor drive systems. We’ll cover how these components enhance performance, efficiency, and reliability, offering higher switching speeds, lower losses, reduced EMI, and improved system stability for smaller, lighter, and more robust designs.

Register to Join

Visit with the EPC GaN Experts at WiPDA 2024!

Common Wear-out Mechanism of pGaN Gate in GaN HEMTs under DC and Inductive Switching Test Methods

Speaker: Shengke Zhang, Ph.D.

In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobility-transistors (HEMTs) under continuous DC gate bias (VGS) and repetitive transient gate overvoltage stress conditions. The high frequency gate overvoltage ringing stress is realized by an inductive switching test circuit. Weibull distribution analyses find the Weibull slope parameter from the DC test (VGS=10 V) is consistent with the slope parameter of the inductive switching test with a peak gate voltage of 10 V. Failure analyses were conducted on failures from both test methods, revealing consistent electrical and physical failure characteristics. By correlating the key failure characteristics from two different tests, this work establishes that impact ionization is the common wearout mechanism responsible for pGaN breakdown under DC and inductive switching test methods.

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IEEE Long Island Power Electronics Symposium

Visit with the EPC GaN Experts at the IEEE Long Island Power Electronics Symposium to discuss solutions to your power conversion needs. Complimentary general admission and parking.

We look forward to seeing you there!

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See you at electronica 2024!

Join EPC at Electronica 2024 in Munich, Germany on November 12-15, where we’ll showcase the industry’s most comprehensive portfolio of Gallium Nitride (GaN) power conversion solutions revolutionizing the way we live.

Schedule a meeting with our team of GaN Experts

Explore Our Booth (Hall B5, Stand 359)

Visit us in Hall B5, Stand 359, to experience firsthand how GaN FETs and ICs enable higher efficiency, smaller size and weight, and lower cost in applications such as DC-DC converters, motor drives, renewable energy, and more.

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EPC – The Power of GaN for Motor Drivers Webinar, in partnership with Anglia

In this webinar we will discover how to use the enhancement-mode gallium nitride (eGaN®) FETs and ICs for motor drives.

We will discuss:

Why GaN for 48 V Motor Drives?

• Increase motor efficiency
• Improve precision
• Smaller and lighter
• Lower EMI

Along with reference designs for key industrial and consumer applications.

Register today: https://www.anglia-live.com/Events/EventDetail.aspx?eventid=91