The ability to simulate GaN devices without practically using them is an extremely important step in the design process. For more detailed electrical simulations, EPC utilizes a hybrid of physics-based and phenomenological functions to achieve a compact spice model with acceptable simulation and convergence characteristics, including temperature effects for conductivity and threshold parameters. These can be found on the EPC Device Models page, while the Circuit Simulation Using EPC Device Models provides an in-depth look at these models. Supported model formats include spice, P-Spice, Simplis/SIMetrix, Spectre, and T-Spice.

GaN devices can be 10 – 15 times smaller than the power MOSFETs they are replacing. However, chip scale packaging allows for multiple side cooling and the PQFN packaging used is extremely thermally efficient without sacrifice to electrical performance.  The GaN FET Thermal Calculator allows for the optimization of the thermal solution once the losses have been determined.