48 V DC-DC POwer Conversion GaN EPC

DC-DC Power Conversion

More Efficient • Smaller • Lower Cost

The demand for information is growing at an unprecedented rate with no signs of slowing. Historically, the power needed to support this rapidly growing demand comes from our electrical grid, and goes through multiple conversion stages before it feeds the remaining energy into a digital semiconductor chip, losing efficiency in each stage.

Traditionally, power conversion has been accomplished using silicon-based power transistors. The advent of commercial and cost-effective gallium nitride (GaN) power transistors and integrated circuits signals a new age in power electronics.

GaN-Based 48 V – 12 V Intermediate Bus Conversion:

  • Efficiency >96% Efficiency
  • Density > 1000 W/in3
  • Cost < $0.06 per Watt (> 500 ku)

Emerging computing applications demand more power in much smaller form factors. In addition to the expanding needs of the server market, some of the most challenging applications are multi-user gaming systems, autonomous cars, artificial intelligence, and cryptocurrency mining.

These advance computing applications are putting higher demands on the power converters. Silicon-based power conversion is not keeping pace…

GaN technology increases the efficiency, shrinks the size, and reduces system cost.

Single-Stage Power Conversion: 48 V – Point-of-Load (POL)

The benefits of GaN-based power converters enable new power delivery approaches that improve overall system efficiency, increase power density, and save costs. Eliminating the intermediate conversion stage and taking 48 V direct to system-level power brings many benefits; improved system performance, lower-loss power distribution, easier thermal management, space savings, and lower system cost and lower operating costs.


GaN FET vs. MOSFET: 48 V – 1.8 V DC-DC Conversion

Reference Designs for 48 VBUS

  Part Number Description VIN VOUT lOUT
(A)
fSW Featured Product  
EPC9130 Demonstration Board
EPC9130 48 V to 12 V Non-Isolated, Regulated Bus Converter 36 - 60 12 50 500 kHz EPC2045 Buy Now
EPC9115 Demonstration Board
EPC9115 48 V to 12 V Isolated, Regulated 1/8th Brick Converter 48 - 60 12 42 300 kHz EPC2020
EPC2021
Buy Now
EPC9118 Demonstration Board
EPC9118 48 V to 5 V, 400 kHz Buck Converter 30 - 60 5 20 400 kHz EPC2001C
EPC2021
Buy Now
LMG5200POLEVM-10 Evaluation Module
LMG5200POLEVM-10 48 V to 1 V Point-of-Load Evaluation Module (Texas Instruments) 36 - 75 0.5 - 1.5 50 1 MHz EPC2023 Buy Now
PMP4497 Evaluation Module
PMP4497 48 V to 1 V Single-Stage Converter (Texas Instruments) 36 - 60 0.8 - 1.2 40 600 kHz EPC2023 Buy Now
EPC9205 Demonstration Board
EPC9205 100 V GaN Power Module 48 - 80 10 700 kHz EPC2045 Buy Now
Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
Package
(mm)
Half-Bridge
Development
Boards
EPC2023 GaN FET
EPC2023 Single 30 1.45 19 5.7 3.2 30 590 LGA 6.05 x 2.3 EPC9031 Buy Now
EPC2100 GaN FET
EPC2100 Half Bridge 30 8.2
2.1
3.6
15
1.3
4.8
0.6
2.7
6.1
29
100
400
BGA 6.05 x 2.3 EPC9036 Buy Now
EPC2111 GaN FET
EPC2111 Half Bridge 30 19
8
1.7
4.5
0.6
1.4
0.3
0.8
3.3
9.6
50
140
BGA 3.5 x 1.5 EPC9086 Buy Now
EPC2024 GaN FET
EPC2024 Single 40 1.5 18 5.1 2.4 45 560 LGA 6.05 x 2.3 EPC9032 Buy Now
EPC2030 GaN FET
EPC2030 Single 40 2.4 17 5.8 3.4 32 490 BGA 4.6 x 2.6 EPC9060 Buy Now
EPC2015C GaN FET
EPC2015C Single 40 4 8.7 2.7 1.2 19 235 LGA 4.1 x 1.6 EPC9001C Buy Now
EPC2049 GaN FET
EPC2049 Single 40 5 6.1 2.1 1.1 13 175 BGA 2.5 x 1.5 EPC9085 Buy Now
EPC2102 GaN FET
EPC2102 Half Bridge 60 4.9 8 2.5 1.5 26
31
220 BGA 6.05 x 2.3 EPC9038 Buy Now
EPC2101 GaN FET
EPC2101 Half Bridge 60 11.5
2.8
3.3
13
1.1
3.9
0.5
2.2
9.3
45
80
350
BGA 6.05 x 2.3 EPC9037 Buy Now
EPC2020 GaN FET
EPC2020 Single 60 2.2 16 3.9 2.3 50 470 LGA 6.05 x 2.3 EPC9033 Buy Now
EPC2031 GaN FET
EPC2031 Single 60 2.6 16 5.0 3.2 48 450 BGA 4.6 x 2.6 EPC9061 Buy Now
EPC2206 GaN FET
EPC2206 Single (AEC-Q101) 80 2.2 15 4.1 3 72 390 LGA 6.05 x 2.3 Contact EPC
EPC2021 GaN FET
EPC2021 Single 80 2.5 15 3.4 2.3 63 420 LGA 6.05 x 2.3 EPC9034 Buy Now
EPC2029 GaN FET
EPC2029 Single 80 3.2 13 3.4 1.9 53 360 BGA 4.6 x 2.6 EPC9046 Buy Now
EPC2103 GaN FET
EPC2103 Half Bridge 80 5.5 6.5 2.2 1.1 34
34
195 BGA 6.05 x 2.3 EPC9039 Buy Now
EPC2105 GaN FET
EPC2105 Half Bridge 80 14.5
3.6
2.7
11
0.9
3
0.5
2.1
11
51
70
300
BGA 6.05 x 2.3 EPC9041 Buy Now
EPC2202 GaN FET
EPC2202 Single (AEC-Q101) 80 17 3.2 1 0.55 18 75 LGA 2.1 x 1.6 Buy Now
EPC2104 GaN FET
EPC2104 Half Bridge 100 6.8 6.8 2.3 1.4 35
41
180 BGA 6.05 x 2.3 EPC9040 Buy Now
EPC2022 GaN FET
EPC2022 Single 100 3.2 13 3.4 2.4 71 390 LGA 6.1 x 2.3 EPC9035 Buy Now
EPC2032 GaN FET
EPC2032 Single 100 4 12 3 2 66 340 BGA 4.6 x 2.6 EPC9062 Buy Now
EPC2045 GaN FET
EPC2045 Single 100 7 5.2 1.7 1.1 21 130 BGA 2.5 x 1.5 EPC9078 Buy Now
EPC2001C GaN FET
EPC2001C Single 100 7 7.5 2.4 1.2 31 150 LGA 4.1 x 1.6 EPC9002C Buy Now
EPC2212 GaN FET
EPC2212 Single (AEC-Q101) 100 13.5 3.2 0.9 0.6 18 75 LGA 2.1 x 1.6 Contact EPC
EPC2016C GaN FET
EPC2016C Single 100 16 3.4 1.1 0.55 16 75 LGA 2.1 x 1.6 EPC9010C Buy Now
EPC2051 GaN FET
EPC2051 Single 100 25 1.8 0.6 0.3 7.2 37 BGA 1.3 x 0.85 EPC9091 Buy Now
EPC2007C GaN FET
EPC2007C Single 100 30 1.6 0.6 0.3 8.3 40 LGA 1.7 x 1.1 EPC9006C Buy Now
EPC2033 GaN FET
EPC2033 Single 150 7 12 3.8 3.2 90 260 BGA 4.6 x 2.6 EPC9047 Buy Now
EPC2047 GaN FET
EPC2047 Single 200 10 8.2 2.9 1.8 60 160 BGA 4.6 x 1.6 EPC9081 Buy Now
EPC2034 GaN FET
EPC2034 Single 200 10 8.8 3.0 1.8 75 200 BGA 4.6 x 2.6 EPC9048 Buy Now
EPC2046 GaN FET
EPC2046 Single 200 25 2.9 1 0.6 22 55 BGA 2.77 x 0.95 EPC9079 Buy Now
EPC2010C GaN FET
EPC2010C Single 200 25 3.7 1.3 0.7 40 90 LGA 3.6 x 1.6 EPC9003C Buy Now
EPC2019 GaN FET
EPC2019 Single 200 50 1.8 0.60 0.35 18 42 LGA 2.8 x 0.95 EPC9014 Buy Now

GaN-Based Point-of-Load Conversion:
Higher Frequency, Higher Efficiency, Smaller Size

Higher Frequency, Higher Efficiency, Smaller Size

Mobile devices are expected to perform an ever-growing array of power-hungry tasks, yet remain small and lightweight, and with extended battery life. To meet these demands, point-of-load (POL) DC-DC converters (the power engines) need to be designed to be small sized and as efficient as possible.

Reducing the size and decreasing the power consumption of the core power electronics is critical to keep pace with these demands. These demands translate to ever faster switching frequencies and GaN-based power devices help eliminate the speed bumps to higher converter frequencies and will drive the next generation of mobile computing.

Reference Designs for Point-of-Load

  Part Number Description VIN VOUT lOUT
(A)
fSW Featured Product  
EPC9086 Demonstration Board
EPC9086 30 V, 15 A, 10 MHz Half Bridge with Gate Drive 12 - 20 15 10 MHz EPC2100 Buy Now
EPC9204 Demonstration Board
EPC9204 30 V GaN Power Module 12 - 20 10 10 MHz EPC2045 Buy Now
EPC9059 Demonstration Board
EPC9059 30 V Half Bridge Parallel Evaluation Board For High Current Applications 20 50 400 kHz EPC2100 Buy Now
Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
Package
(mm)
Half-Bridge
Development
Boards
EPC2023 GaN FET
EPC2023 Single 30 1.45 19 5.7 3.2 30 590 LGA 6.05 x 2.3 EPC9031 Buy Now
EPC2100 GaN FET
EPC2100 Half Bridge 30 8.2
2.1
3.6
15
1.3
4.8
0.6
2.7
6.1
29
100
400
BGA 6.05 x 2.3 EPC9036 Buy Now
EPC2111 GaN FET
EPC2111 Half Bridge 30 19
8
1.7
4.5
0.6
1.4
0.3
0.8
3.3
9.6
50
140
BGA 3.5 x 1.5 EPC9086 Buy Now
EPC2024 GaN FET
EPC2024 Single 40 1.5 18 5.1 2.4 45 560 LGA 6.05 x 2.3 EPC9032 Buy Now
EPC2030 GaN FET
EPC2030 Single 40 2.4 17 5.8 3.4 32 490 BGA 4.6 x 2.6 EPC9060 Buy Now
EPC2015C GaN FET
EPC2015C Single 40 4 8.7 2.7 1.2 19 235 LGA 4.1 x 1.6 EPC9001C Buy Now
EPC2049 GaN FET
EPC2049 Single 40 5 6.1 2.1 1.1 13 175 BGA 2.5 x 1.5 EPC9085 Buy Now
EPC2014C GaN FET
EPC2014C Single 40 16 2 0.70 0.30 4 60 LGA 1.7 x 1.1 EPC9005C Buy Now

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