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Wireless Power

  

Wireless Power Market

As wireless power gains popularity, there is a push for operation in the higher frequency ISM bands of 6.78 MHz and 13.56 MHz where resonant systems allow high spatial freedom at high efficiency. At these high frequencies, traditional MOSFET technology is approaching its capability limit.

eGaN® FETs offer an alternative to MOSFETs. With switching transition speeds in the sub nano-second range, eGaN FETs can switch fast enough to be ideal for wireless power applications.

Wireless Handbook
Now Available!

Wireless Power MarketeGaN FETs enable the highest efficiencies in all topologies using 6.78 MHz and 13.56 MHz frequencies.
ZVS-CD = Zero Voltage Switched Class-D
SE-CE = Single Ended Class-E
CM-CD = Current Mode Class-D
VM-CD = Voltage Mode Class-D

Application Brief – eGaN FETs for Wireless Power

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Recommended Devices for Wireless Power Designs

Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
LGA Package
(mm)
Half-Bridge
Development
Boards
EPC2014C Single 40 16 2 0.70 0.30 4 60 1.7 x 1.1
EPC8004 Single 40 110 0.37 0.120 0.047 0.63 7.5 2.1 x 0.85 EPC9024
EPC8009 Single 65 130 0.37 0.120 0.055 0.94 7.5 2.1 x 0.85 EPC9029
EPC2016C Single 100 16 3.4 1.1 0.55 16 75 2.1 x 1.6 EPC9010C
EPC2007C Single 100 30 1.6 0.6 0.3 8.3 40 1.7 x 1.1
EPC2036 Single 100 65 0.7 0.17 0.14 3.9 18 0.9 x 0.9 EPC9050
EPC8010 Single 100 160 0.36 0.130 0.060 2.2 7.5 2.1 x 0.85 EPC9030
EPC2010C Single 200 25 3.7 1.3 0.7 40 90 3.6 x 1.6 EPC9003C
EPC2019 Single 200 50 1.8 0.60 0.35 18 42 2.8 x 0.95 EPC9014
EPC2012C Single 200 100 1 0.30 0.20 10 22 1.7 x 0.9 EPC9004C

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