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Wireless Power

  

Wireless Power Market

As wireless power gains popularity, there is a push for operation in the higher frequency ISM bands of 6.78 MHz and 13.56 MHz where resonant systems allow high spatial freedom at high efficiency. At these high frequencies, traditional MOSFET technology is approaching its capability limit.

eGaN® FETs offer an alternative to MOSFETs. With switching transition speeds in the sub nano-second range, eGaN FETs can switch fast enough to be ideal for wireless power applications.

Wireless Handbook
Now Available!

Application Brief – eGaN FETs for Wireless Power

The top five benefits of wireless power

eGaN Technology for Wireless Power Transfer
Is Wireless Electricity Within Reach?

A4WP's wireless charging spec triples available power for laptops, tablets

Demonstration Kits Reduce Time to Market

Wireless Power Demo Board

Wireless Power demonstration kits contain a source board (transmitter or power amplifier), a source coil (transmit coil) and a device coil with rectifier and DC smoothing capacitor.

Highly Resonant Wireless Power Kits

Part
Number
Output Power Operating Frequency
EPC9111 35 W 6.78 MHz preset or user selectable
EPC9112 50 W 6.78 MHz preset or user selectable

AirFuel™ Alliance Compatible Wireless Power Kits

Part
Number
Class Output Power Operating Frequency
EPC9113 3 16 W 6.78 MHz
EPC9114 2 10 W 6.78 MHz

Wireless Power Amplifier Boards

Part Number Description VIN VOUT lOUT
(A)
Featured Product Schematic Gerber Bill of
Materials
 
EPC9506ZVS Class-D8V - 32VVIN10AEPC2014
EPC9507ZVS Class-D8V - 36VVIN6AEPC2007C
EPC2038
EPC9508ZVS Class-D7V - 36VVIN3AEPC8009
EPC2007
EPC9509ZVS Class-D17V - 24V52V1AEPC2108
EPC2036
EPC9510ZVS Class-D17V - 24V66V0.8AEPC2107
EPC2036
EPC9051Class-E0V - 40VVIN1AEPC2037
EPC9052Class-E0V - 40VVIN1 AEPC2012C
EPC9053Class-E0V - 40VVIN1 AEPC2019
EPC9054Class-E0V - 40VVIN1 AEPC2010C
EPC9065ZVS Class-D12 V (max VDD)80 V1.8 ARMSEPC2007C
EPC8010

GaN Integrated Circuits

Part
Number
VDS
RDS(ON)
(typ)
QOSS
typ
Q1 Control FET Q2 Sync. FET Bootstrap FET Q1 Control FET Q2 Sync. FET Bootstrap FET
EPC2107 100 240 mΩ 240 mΩ 2.1 Ω 800 pC 1400 pC 140 pC
EPC2108 60 150 mΩ 150 mΩ 2.1 Ω 650 pC 1000 pC 100 pC

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Recommended Devices for Wireless Power Designs

Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
LGA Package
(mm)
Half-Bridge
Development
Boards
EPC2014C Single 40 16 2 0.70 0.30 4 60 1.7 x 1.1 EPC9005C
EPC8004 Single 40 110 0.37 0.120 0.047 0.63 7.5 2.1 x 0.85 EPC9024
EPC2108 Dual with
Integrated Bootstrap
60 190 0.22 0.085 0.045 0.65
1
5.5 1.35 x 1.35 N/A
EPC8009 Single 65 130 0.37 0.120 0.055 0.94 7.5 2.1 x 0.85 EPC9029
EPC2039 Single 80 22 2 0.63 0.42 7.6 50 1.35 x 1.35 EPC9057
EPC2038 Single 100 2800 0.044 0.016 0.005 0.14 0.5 0.9 x 0.9 EPC9507
EPC2016C Single 100 16 3.4 1.1 0.55 16 75 2.1 x 1.6 EPC9010C
EPC2007C Single 100 30 1.6 0.6 0.3 8.3 40 1.7 x 1.1 N/A
EPC2036 Single 100 65 0.7 0.17 0.14 3.9 18 0.9 x 0.9 EPC9050
EPC8010 Single 100 160 0.36 0.130 0.060 2.2 7.5 2.1 x 0.85 EPC9030
EPC2107 Dual with
Integrated Bootstrap
100 320 0.16 0.065 0.04 0.8
1.4
3.8 1.35 x 1.35 N/A
EPC2110 Dual,
Common Source
120 60 0.8 0.25 0.19 4.9 20 1.35 x 1.35 N/A
EPC2010C Single 200 25 3.7 1.3 0.7 40 90 3.6 x 1.6 EPC9003C
EPC2019 Single 200 50 1.8 0.60 0.35 18 42 2.8 x 0.95 EPC9014
EPC2012C Single 200 100 1 0.30 0.20 10 22 1.7 x 0.9 EPC9004C

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