As wireless power gains popularity, there is a push for operation in the higher frequency ISM bands of 6.78 MHz and 13.56 MHz where resonant systems allow high spatial freedom at high efficiency. At these high frequencies, traditional MOSFET technology is approaching its capability limit.
eGaN® FETs offer an alternative to MOSFETs. With switching transition speeds in the sub nano-second range, eGaN FETs can switch fast enough to be ideal for wireless power applications.
Application Brief – eGaN FETs for Wireless Power
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Demonstration kits contain a source board (transmitter or power amplifier), an AirFuel Alliance compatible source coil (transmit coil) and an AirFuel Alliance compatible device coil with rectifier and DC smoothing capacitor.