As wireless power gains popularity, there is a push for operation in the higher frequency ISM bands of 6.78 MHz and 13.56 MHz where resonant systems allow high spatial freedom at high efficiency. At these high frequencies, traditional MOSFET technology is approaching its capability limit.
eGaN® FETs offer an alternative to MOSFETs. With switching transition speeds in the sub nano-second range, eGaN FETs can switch fast enough to be ideal for wireless power applications.
Application Note – eGaN FETs for Low Cost Resonant Wireless Power Applications
A 10 W Multi-Mode Capable Wireless Power Amplifier for Mobile Devices
Application Brief – eGaN FETs for Wireless Power
The top five benefits of wireless power
A4WP's wireless charging spec triples available power for laptops, tablets
Wireless Power demonstration kits contain a source board (transmitter or power amplifier), a source coil (transmit coil) and a device coil with rectifier and DC smoothing capacitor.