University Research

Many of the world’s leading university’s are continuously investigating gallium nitride technology. The results of these studies form a critical base of understanding for furthering the application of GaN power devices in the real world. The following are examples of published works in this area. Please note that some downloads may require membership.

Contact EPC to submit your work related to GaN power transistors for inclusion in the GaN Library

 

High Efficiency Radio Frequency Power Amplifier Module
Twieg, M.; de Rooij, M.A.; Griswold, M.A.
Case Western University
Magnetic Resonance in Medicine, doi:10.1002/mrm.26510, 2016

A 98.8% Efficient Bidirectional Full-Bridge Isolated DC-DC GaN Converter
Ramachandran, Rakesh ; Nymand, Morten ; Maersk Mc-Kinney Moller Institute, University of Southern Denmark
Applied Power Electronics Conference and Exposition (APEC), 2016 IEEE

Evaluation of Gallium Nitride HEMTs for VRM Designs
Venkatesh Avula, University of Idaho, Steve Sandler, Picotest
DesignCon 2016

Active Detuning of MRI Receive Coils with GaN FETs
Twieg, M.; de Rooij, M.A.; Griswold, M.A.
Case Western University
IEEE Transactions on Microwave Theory and Techniques, Vol. PP, No. 99, November 12, 2015, pp. 4270 - 4278

Envelope Tracking of an RF High Power Amplifier With an 8-Level Digitally Controlled GaN-on-Si Supply Modulator
C. Florian, T. Cappello, R. P. Paganelli, D. Niessen, F. Filicori
University of Bologna
IEEE Transactions on Microwave Theory and Techniques, Vol. 63, No. 8, August 2015, pp. 2589-2602

Design and analysis of an ultra-high efficiency phase shifted full bridge GaN converter
Ramachandran, Rakesh ; Maersk Mc-Kinney Moller Institute, University of Southern Denmark, Odense, Denmark ; Nymand, Morten
University of Southern Denmark
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE

Design of a compact, ultra high efficient isolated DC-DC converter utilizing GaN devices
Ramachandran, Rakesh; Nymand, Morten; Petersen, Niels H.
University of Southern Denmark
Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE, 2014

Study on an interleaved buck power factor corrector with gallium nitride field effect transistor and integrated inductor
Chien-yu Lin; Yu-Chen Liu ; Huang-Jen Chiu ; Yu-Kang Lo ; Chung-Yi Lin ; Po-Jung Tseng ; Shih-Jen Cheng
National Taiwan University of Science and Technology
Power Electronics, IET (Volume:7, Issue: 10 ), 20 October 2014

Buck Derived Converters Based on Gallium Nitride Devices for Envelope Tracking Applications
Fernandez Miaja, P; Rodriguez, A. ; Sebastian, J.
University of Oviedo
Power Electronics, IEEE Transactions, 21 May 2014

Enhancement Mode GaN (eGaN® FETs) for Coil Detuning
Michael Twieg, Matthew J. Riffe, Mark A. Griswold, Case Western Reserve University; Michael de Rooij, Efficient Power Conversion Corporation
Joint Annual Meeting ISMRM-ESMRMB, 10 – 16 May 2014

5MHz PWM-controlled current-mode resonant DC-DC converter with GaN-FETs
Hariya, Akinori; Ishizuka, Yoichi; Matsuura, Ken; Yanagi, Hiroshige; Tomioka, Satoshi; Ninomiya, Tamotsu
Nagasaki University's Academic Output SITE
Applied Power Electronics Conference and Exposition (APEC), 2014

Theoretical and Numerical Design of a Wireless Power Transmission Link With GaN-Based Transmitter and Adaptive Receiver
C. Florian, F. Mastri, R. P. Paganelli, D. Masotti, A. Costanzo
University of Bologna
IEEE Transactions on Microwave Theory and Techniques, Vol. 62, No. 4, April 2014, pp. 931-946.

A GaN Transistor based 90W AC/DC Adapter with a Buck-PFC Stage and an Isolated Quasi-Switched-Capacitor DC/DC Stage
Xuan Zhang, Chengcheng Yao, Xintong Lu, Ernest Davidson, Markus Sievers, Mark J. Scott, Pu Xu, and Jin Wang
The Ohio State University
Applied Power Electronics Conference and Exposition (APEC), 2014

Optimization of a High Density Gallium Nitride Based Non-Isolated Point of Load Module
David Reusch, Fred C. Lee, David Gilham, Yipeng, Su
Center for Power Electronics Systems, Virginia Tech
CPES Conference 2013

A High-Performance Photovoltaic Module-Integrated Converter (MIC) Based on Cascaded Quasi-Z-Source Inverters (qZSI) Using eGaN FETs
Yan Zhou; Liming Liu; Hui Li
Center for Advanced Power Systems, Florida State University
IEEE Transactions on Power Electronics (Volume:28, Issue: 6 ), 18 September 2012

Effects of Parasitic Capacitances on Gallium Nitride Heterostructure Power Transistors
Raghav Khanna, William Stanchina and Gregory Reed
University of Pittsburgh
IEEE Energy Conversion Congress & Exposition Proceedings, 2012

A 25.6 W 13.56 MHz wireless power transfer system with a 94% efficiency GaN Class-E power amplifier
W. Chen, R. A. Chinga, S. Yoshida, J. Lin, C. Chen and W. Lo
Industrial Technology Research Institute, University of Florida, NEC Corporation
Microwave Symposium Digest, 2012

Gallium Nitride Based 3D Integrated Non-Isolated Point of Load Module
David Reusch, David Gilham, Yipeng Su, Fred C. Lee
Center for Power Electronics Systems, Virginia Tech
Applied Power Electronics Conference and Exposition (APEC), 2012

A Gallium Nitride Switched-Capacitor Power Inverter for Photovoltaic Applications
Mark Scott, Ke Zou, Ernesto Inoa, Ramiro Duarte, Yi Huang, Jin Wang
The Ohio State University
Applied Power Electronics Conference and Exposition (APEC), 2012

GaN-FET Based Dual Active Bridge DC-DC Converter
Daniel Costinett, Hien Nguyen, Regan Zane, and Dragan Maksimovic
Colorado Power Electronics Center, University of Colorado at Boulder
Applied Power Electronics Conference and Exposition (APEC), 2011