eGaN Drivers and Controllers

EPC brings enhancement mode to GaN, disrupting the power conversion market and enabling new applications. Compared to the aging silicon MOSFET, GaN FETs have higher switching speeds in a much smaller footprint. Optimzed gate drive ICs and controllers help to extract the full advantage from this new, game-changing technology. For a more detailed discussion on gate drive requirements please see eGaN® FET Drivers and Layout Considerations.

As semiconductor suppliers continue to release driver ICs specifically optimized for eGaN FETs, the task of transitioning from silicon to eGaN technology will become even simpler and more cost effective.

Below is a list of existing IC’s compatible with eGaN FETs:

GaN Drivers and Controllers
Part NumberFunctionManufacturerDescription
NCP4305ControllerOn SemiconductorSecondary-side Synchronous Rectifier Controller
TPS53632GControllerTexas InstrumentsHalf-Bridge, D-CAP+ Controller for 48-V GaN DC/DC Converter
ISL70040SEHGate DriverRenesasRadiation Hardened Low Side GaN FET Driver
LM5113Gate DriverTexas Instruments5 A, 100 V Half-Bridge Driver for eGaN FETs
LMG1020Gate DriverTexas Instruments5 V, 7 A/5 A Low Side GaN Driver With 60 MHz/1ns Speed
LMG1205Gate DriverTexas Instruments1.2 A, 5 A, 100 V Half-Bridge Driver for eGaN FETs
LMG1210Gate DriverTexas Instruments200 V, 1.5 A/3 A Half Bridge GaN Driver With Adjustable Dead-time
PE29102Gate DriverPeregrineHigh-speed FET Driver, 40 MHz
UCC27611Gate DriverTexas Instruments4 A/6 A High-Speed 5 V Optimized Single Gate Driver
uP1966AGate DriveruPI SemiconductorDual-Channel Gate Driver for eGaN FETs
Si827xGB-IMIsolated Gate DriverSilicon Labs4 Amp ISOdriver. For GaN applications designate “GB” suffix for
low UVLO and “IM” suffix for 5 x 5 mm LGA package.
FBS-GAM02-P-R50Power StageFreebird Semiconductor50 V/10 A Radiation Hardened Multifunction Power Module
LMG5200Power StageTexas Instruments80 V GaN Half-Bridge Power Stage