EPC brings enhancement mode to GaN. This allows immediate realization of the disruptive gains in efficient high frequency and low duty cycle power conversion. In order to extract full advantage from this new, game-changing technology, designers must first understand the specific drive requirements of the eGaN FET. For a more detailed discussion on gate drive requirements please see eGaN® FET Drivers and Layout Considerations.
As semiconductor suppliers continue to release driver ICs specifically optimized for eGaN FETs, the task of transitioning from silicon to eGaN technology will become even simpler and more cost effective.
Below is a list of existing IC’s compatible with eGaN FETs: