eGaN Drivers and Controllers

EPC brings enhancement mode to GaN. This allows immediate realization of the disruptive gains in efficient high frequency and low duty cycle power conversion. In order to extract full advantage from this new, game-changing technology, designers must first understand the specific drive requirements of the eGaN FET. For a more detailed discussion on gate drive requirements please see eGaN® FET Drivers and Layout Considerations.

As semiconductor suppliers continue to release driver ICs specifically optimized for eGaN FETs, the task of transitioning from silicon to eGaN technology will become even simpler and more cost effective.
Below is a list of existing IC’s compatible with eGaN FETs:

Part NumberFunctionManufacturerDescription
LM5113 Gate DriverTexas Instruments5 A, 100 V Half-Bridge Driver for eGaN FETs
LM5114Gate Driver Texas Instruments Single 7.6A Peak Current Low-Side Gate Driver
UCC27611Gate DriverTexas Instruments4 A/6 A High-Speed 5 V Optimized Single Gate Driver
NCP4305Controller On SemiconductorSecondary-side Synchronous Rectifier Controller
TPS53632GController Texas InstrumentsHalf-Bridge, D-CAP+ Controller for 48-V GaN DC/DC Converter