EPC2101 - Enhancement Mode GaN Power Transistor Half Bridge

VDS, 60 V
RDS(on),
11.5 mΩ (Q1, Control FET),
2.8 mΩ (Q2, Sync FET)
ID, 10 A (Q1), 40 A (Q2)
Pulsed ID,
80 A (Q1), 350 A (Q2)
RoHS 6/6, Halogen Free

EPC2101 Enhancement Mode GaN Power Transistor
Die Size: 6.05 mm x 2.3 mm

Applications

  • High Frequency DC-DC Conversion

Benefits

  • Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production
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