EPC2111 - Enhancement-Mode GaN Power Transistor Half Bridge

VDS, 30 V
RDS(on),
19 mΩ (Q1, Control FET),
8 mΩ (Q2, Sync FET)
ID, 16 A (Q1), 16 A (Q2)
Pulsed ID, 50 A (Q1), 140 A (Q2)
RoHS 6/6, Halogen Free

EPC2111 Enhancement Mode GaN Power Transistor
Die Size: 3.5 mm x 1.5 mm

Applications

  • High Frequency DC-DC Conversion
  • Point-of-Load (POL) Converters

Benefits

  • Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production