EPC Patents

EPC has developed proprietary enhancement-mode GaN technology that allows EPC’s FETs and ICs to broadly replace power MOSFETs and LDMOS solutions. EPC has built and continues to develop a comprehensive IP portfolio including patents granted in China, Japan, Korea, Taiwan and the United States.

Issue Date Country/Region Patent Number Title  
03/26/2019 US 10243546 ENHANCEMENT MODE FET GATE DRIVER IC
03/12/2019 US 10230341 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
03/01/2019 Japan 6486938 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
02/26/2019 US 10218353 LOW DISTORTION RF SWITCH
02/22/2019 Japan 6483116 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
01/22/2019 China ZL201480042752.2 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
11/11/2018 Taiwan I641218 ENHANCEMENT MODE FET GATE DRIVER IC
11/06/2018 China ZL201480020258.6 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
11/02/2018 China ZL201480043093.4 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
11/02/2018 China ZL201480049293.0 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
10/09/2018 US 10096702 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATING SAME
10/02/2018 US 10090274 FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY
09/25/2018 US 10084445 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
08/31/2018 Japan 6393758 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
08/10/2018 Japan 6381639 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
07/21/2018 Taiwan I543368 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
07/20/2018 Japan 6371309 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
06/15/2018 Japan 6351718 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
02/21/2018 Taiwan I615977 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
02/06/2018 US 9887677 HIGH EFFICENCY VOLTAGE MODE CLASS D TOPOLOGY
01/30/2018 China ZL201380068885.2 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
12/08/2017 Hong Kong 1188514 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
12/05/2017 US 9837438 GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS
12/01/2017 Taiwan I607626 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
08/29/2017 US 9748347 GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
08/21/2017 Taiwan I596893 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
07/07/2017 Hong Kong HK1189427 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
05/30/2017 US 9667245 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
05/26/2017 Japan 6147018 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
04/25/2017 US 9634555 METHOD FOR OPERATING A NON-ISOLATED SWITCHING CONVERTER HAVING SYNCHRONOUS RECTIFICATION CAPABILITY SUITABLE FOR POWER FACTOR CORRECTION APPLICATIONS
03/28/2017 US 9607876 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
02/28/2017 US 9583480 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
02/21/2017 Taiwan I572037 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
01/18/2017 China ZL201310057366.8 ENHANCEMENT MODE GAN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
01/11/2017 Taiwan I566328 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
01/11/2017 Taiwan I566402 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
01/04/2017 Korea 10-1694883 BACK DIFFUSION SUPRESSION STRUCTURES
11/16/2016 China ZL201280005518.3 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS
11/01/2016 US 9484862 DEVICE AND METHOD FOR BIAS CONTROL OF CLASS A POWER RF AMPLIFIER
10/21/2016 Taiwan I555209 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
10/21/2016 Taiwan I555197 PARALLEL CONNECTION METHODS FOR HIGH PERFORMANCE TRANSISTORS
10/11/2016 Korea 10-1666910 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
09/22/2016 Korea 10-1660871 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
09/21/2016 China ZL201180060404.4 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
08/01/2016 Taiwan I544606 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
06/11/2016 Taiwan I538208 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
05/09/2016 Korea 10-1620987 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
05/03/2016 US 9331061 PARALLEL CONNECTION METHODS FOR HIGH PERFORMANCE TRANSISTORS
05/03/2016 US 9331191 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
03/11/2016 Taiwan I525765 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
02/11/2016 Taiwan I521641 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/21/2015 Taiwan I514567 BACK DIFFUSION SUPRESSION STRUCTURES
12/21/2015 Taiwan I514568 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATE THE SAME
12/15/2015 US 9214528 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/15/2015 US 9214461 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
12/15/2015 US 9214399 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
10/27/2015 US 9171911 ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
10/16/2015 Hong Kong HK1165614 DOPANT DIFFUSION MODULATION IN GAN BUFFER LAYERS
10/16/2015 Hong Kong HK1165616 BACK DIFFUSION SUPRESSION STRUCTURES
09/01/2015 Taiwan I499054 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/31/2015 Japan 2012-504807 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/31/2015 Japan 5785153 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
06/21/2015 Taiwan I489751 METHOD FOR OPERATING A NON-ISOLATED SWITCHING CONVERTER HAVING SYNCHRONOUS RECTIFICATION CAPABILITY SUITABLE FOR POWER FACTOR CORRECTION APPLICATIONS
05/19/2015 US 9035417 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
04/22/2015 China 201080014928.5 DOPANT DIFFUSION MODULATION IN GAN BUFFER LAYERS
04/22/2015 China 201080015360.9 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
04/08/2015 China 201080015469.2 BACK DIFFUSION SUPRESSION STRUCTURES
03/03/2015 US 8969918 ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
02/06/2015 Japan 5689869 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
01/23/2015 Japan 5684230 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
12/26/2014 Japan 5670427 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
12/12/2014 Japan 5663000 BACK DIFFUSION SUPRESSION STRUCTURES
11/21/2014 Hong Kong 1165615 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
11/18/2014 US 8890168 ENHANCEMENT MODE GAN HEMT DEVICE
10/07/2014 US 8853749 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
09/02/2014 US 8823012 ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
07/30/2014 China ZL201080015425.X COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/22/2014 US 8785974 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
05/07/2014 China ZL201080015388.2 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME
04/11/2014 Taiwan I434414 ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
09/21/2013 Taiwan I409859 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
05/07/2013 US 8436398 BACK DIFFUSION SUPRESSION STRUCTURES
04/30/2013 US 8431960 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
03/26/2013 US 8404508 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
01/08/2013 US 8350294 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME