uP1966E: 80 V Half Bridge Gate Driver for eGaN® FETs

Features

  • 0.4 Ω/0.7 Ω pull-down/pull-up resistance
  • Fast propagation delays (20 ns, Typical)
  • Fast rise and fall times (8 ns/4 ns, Typical)
  • Adjustable output for turn-on/turn-off ability
  • CMOS compatible input-logic (independent of supply volage)
  • Under voltage lockout for supply input
uP1966E: 85 V Dual-Channel Gate Driver for eGaN FETs
Die Size: 1.6 mm x 1.6 mm

Applications

  • DC-DC Converters
  • Isolated DC-DC Converters
  • Sync rectification for AC-DC & DC-DC
  • LiDAR/Pulsed Power
  • Point of Load Converters
  • Class D Audio
  • LED Lighting
Status: Active
EPC is authorized to sell uP1966E in Americas and EMEA. For support of uP1966E in Asia please contact uPI Semiconductor

Datasheet

Evaluation Boards

Start your design today with these low cost evaluation options:

Half Bridge Example: EPC90123 100 V, 25 A half-bridge evaluation $118.75
DC-DC Example: EPC9153 High efficiency (>98%) 250 W buck converter $309.96

Quality & Reliability

Design Resources

Application Notes


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