Motor Drive Demos

Motor Drive Seminar

Motor Drive

ePower™ Stage

Part
Number 		Configuration Nominal
Logic Supply
Voltage (V) 		Max.
Input Voltage
(V) 		Typ.
RDS(on)
(mΩ) 		Rated Output
Current
(A) 		Features Fault Protection Max.
TJ
(°C) 		Package
(mm) 		Development
Board
EPC2152 GaN FET
 EPC2152 Half-Bridge
ePower™ Stage		 12 70 10 12.5 Level shifting,
Bootstrap circuits		 UVLO 150 LGA 3.65 x 2.59 EPC90120

GaN FETs and ICs

Part
Number		 Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)		QG
typ
(nC)		 QGS
typ
(nC)		 QGD
typ
(nC)		 QOSS
typ
(nC)		 Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)		 Package
(mm)		 Half-Bridge
Development
Boards
EPC2101 GaN FET
 EPC2101 Half Bridge 60 11.5
2.8		 3.3
13		 1.1
3.9		 0.5
2.2		 9.3
45		 80
350		 BGA 6.05 x 2.3 EPC9037
EPC2102 GaN FET
 EPC2102 Half Bridge 60 4.9 8 2.5 1.5 26
31		 220 BGA 6.05 x 2.3 EPC9038
EPC2039 GaN FET
 EPC2039 Single 80 25 1.91 0.76 0.42 7.64 50 BGA 1.35 x 1.35 EPC9057
EPC2105 GaN FET
 EPC2105 Half Bridge 80 14.5
3.6		 2.7
11		 0.9
3		 0.5
2.1		 11
51		 70
300		 BGA 6.05 x 2.3 EPC9041
EPC2103 GaN FET
 EPC2103 Half Bridge 80 5.5 6.5 2.2 1.1 30
34		 195 BGA 6.05 x 2.3 EPC9039
EPC2021 GaN FET
 EPC2021 Single 80 2.2 15 4.1 3 72 390 LGA 6.05 x 2.3 EPC9034
EPC2106 GaN FET
 EPC2106 Half Bridge 100 70 0.73 0.24 0.14 3.96
4.68		 18 BGA 1.35 x 1.35 EPC9055
EPC2212 GaN FET
 EPC2212 AEC Single 100 13.5 3.2 0.9 0.6 18 75 LGA 2.1 x 1.6 N/A
EPC2001C GaN FET
 EPC2001C Single 100 7 7.5 2.4 1.2 31 150 LGA 4.1 x 1.6 EPC9013
EPC2045 GaN FET
 EPC2045 Single 100 7 6 1.9 0.8 25 130 BGA 2.5 x 1.5 N/A
EPC2104 GaN FET
 EPC2104 Half Bridge 100 6.8 6.8 2.3 1.4 35
41		 180 BGA 6.05 x 2.3 EPC9040
EPC2053 GaN FET
 EPC2053 Single 100 3.8 11.4 4.1 1.5 45 246 BGA 3.5 x 2 EPC9093
EPC2022 GaN FET
 EPC2022 Single 100 3.2 13.2 3.4 2.4 71 390 LGA 6.05 x 2.3 EPC9035
EPC2034C GaN FET
 EPC2034C Single 200 8 11.4 3.8 2.1 95 213 LGA 4.6 x 2.6 EPC9048C

GaN Reliability

This Phase 11 reliability report adds to the growing knowledge base published in the first ten reports [1-10] and covers several key new topics. Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field reliability record. This report will discuss the strategy used to achieve this track record that relied upon tests forcing devise to fail under a variety of conditions to create strong and strong products for the industry.

Alejandro Pozo Ph.D., Shengke Zhang Ph.D., Ricardo Garcia, John Glaser Ph.D., Zhikai Tang Ph.D., and Robert Strittmatter Ph.D, Efficient Power Conversion Corporation

Download Reliability Report

Phase 11 reliability
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