Reliability Webinar

GaN Device Reliability – Proven More Robust than Silicon

Gallium Nitride (GaN) devices have been in volume production since March 2010 and have demonstrated very high reliability in both laboratory testing and high-volume customer applications with a remarkable field reliability record. In this webinar learn more about the extensive reliability testing conducted to continue the understanding of the behavior of GaN devices over a wide range of stress conditions and applications and how that knowledge is used to create even more robust devices.

In this webinar, we'll discuss:

• A physics-based lifetime model supporting evidence to project an eGaN device's lifetime under gate stress overall voltages and temperature ranges.
• A first-principles mathematical model describes the dynamic RDS(on) effect in eGaN FETs from the fundamental physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes overall voltages and temperatures in more complex mission profiles.
• Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.