How to GaN Webinar Series

Reliability Webinar

Testing GaN to Failure to Create Devices More Robust than Silicon (Conducted in Chinese, English, and Japanese)

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  • A physics-based lifetime model supporting evidence to project an eGaN device's lifetime under gate stress overall voltages and temperature ranges.
  • A first-principles mathematical model describes the dynamic RDS(on)effect in eGaN FETs from the fundamental physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes overall voltages and temperatures in more complex mission profiles.
  • Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.

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Alex Lidow

Speaker: Alex Lidow is CEO and co-founder of Efficient Power Conversion Corporation (EPC). Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects, including co-authoring the first textbook on GaN transistors, GaN Transistors for Efficient Power Conversion, now in its third edition published by John Wiley and Sons. Lidow earned his Bachelor of Science degree from Caltech and his Ph.D. from Stanford.

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