Achieving Benchmark Power Density of 5130 W/in3 with GaN FETs and Digital Control
Date: July 16, 2024
Time: 10:00 AM Central Daylight Time
Register Now!
This webinar will offer a comprehensive exploration of the EPC9159 1kW DC-DC demonstration board,
showcasing how gallium nitride (GaN) technology and advanced digital control can revolutionize power
density performance. Our experts from Microchip and EPC will provide valuable insights into the
technical advantages and practical applications of GaN-based high power density solutions, enabling
you to harness these cutting-edge technologies for your own projects.
Key Topics Covered:
- Overview of GaN technology and its benefits
- Detailed examination of the EPC9159 demonstration board
- Achieving unprecedented power density with GaN FETs
- Integration of digital control for enhanced performance
- Q&A session with industry experts
Note: If you can't attend the live webinar, be sure to still register as we'll send you the recording afterward!
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Speakers
Andreas Reiter: Applications Engineer, Digital Power Conversion, Microchip
Andreas studied physics at the University of Applied Science, Munich, Germany. Since 1996 Andy focused on
thermodynamic system modelling and related hardware and software development before joining the power conversion
community in 2006, focusing on the development of full and semi-digital control stages of switched-mode power
supplies. Andy joined Microchip Technology in 2010 and today is working as applications engineer for digital
power applications. He holds several patents on control algorithms, DSP core and IC peripheral architectures.
Alejandro Pozo Arribas: Senior Applications Engineer, EPC
Alejandro has been a Senior Applications Engineer at EPC since August 2022. He is responsible for the design and
development of demonstration boards and reference designs using GaN devices in DC/DC converters. Prior to August
2022, and since 2017, he was involved in product reliability and device characterization of EPC’s GaN devices. He
received his Ph.D. in Electrical Engineering from the Illinois Institute of Technology in 2017 for his work in
base drivers for SiC BJTs.