How EPC eGaN FETs and ICs Power Lidar

The high performance of gallium nitride transistors has been a key factor in the development of modern, cost‐effective lidar systems by enabling laser drivers with extremely fast, high current pulses.

Recorded at the Automotive LIDAR Conference September 26th, 2019 in Detroit, Michigan, John Glaser, Director of Applications at Efficient Power Conversion (EPC) using the EPC9126 evaluation board from EPC demonstrates a 100V, high current, pulsed laser diode driver and the rapid transition capability of eGaN® FETs and ICs to provide power pulses to drive the laser up to 10 times faster than an equivalent MOSFET.