How to GaN 11 – Applications: DC-DC for Ultra-Thin 48 V – 20 V Converters

In this video, showing how leveraging the advantages of eGaN FETs, such as small size and low losses, enhances the performance of ultra-thin, multilevel converters is discussed. Since GaN transistors are smaller and faster than MOSFETs, and offer a significant reduction in board real estate, multilevel topologies have become attractive as a solution to meet the demands by computers, displays, smart phones, and other consumer electronic systems to design thinner solutions while extracting more power out of limited space.


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