Events

ISSCC 2023

Sunday, February 19, 2023 - Thursday, February 23, 2023
ISSCC 2023
Location: San Francisco, CA

The Opportunity from GaN and for GaN in CarsSpeaker: Alex Lidow, CEO and Co-founder, Efficient Power Conversion Corp.

Two technologies that have recently crossed their tipping point for mass adoption are electric cars and gallium nitride power semiconductors. Both technologies have a significant influence on each other’s path to the future. GaN has demonstrated it is a superior power semiconductor that both outperforms silicon and can be produced at a lower cost. Automotive electrification enables a whole new set of opportunities for improved energy efficiency, and GaN adoption in vehicular applications such as headlamps, lidar sensors, and 48 V power distribution systems contribute to both the safety and efficiency of cars propelled by traditional internal combustion (ICE), mild hybrid systems (HEV), as well as battery – electric vehicles (BEV). This talk will discuss the benefits derived from GaN adoption in vehicles, the future trajectory of adoption including the technological evolution of GaN transistors, GaN integrated circuits, and new circuit topologies for electric vehicle traction drives based on low voltage GaN technology.

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APEC 2023

Sunday, February 19, 2023 - Thursday, February 23, 2023
APEC 2023
Location: Orlando, FL

Applied Power Electronics Conference (APEC) 2023

The EPC Team will be featuring the industry’s broadest portfolio of GaN power conversion solutions that are changing the way we live. GaN FETs and ICs enable higher efficiency, smaller size and weight, and lower cost in applications such as DC-DC converters, lidar, motor drives for eMobility, robotics, and drones, solar power, and low-cost satellites.

Click for more details on our presentations and how to meet with EPC during APEC 2023

Power Electronics International Conference

Tuesday, April 18, 2023 - Wednesday, April 19, 2023
Power Electronics International Conference
Location: Brussels, Belgium

GaN Integrated Circuits are Revolutionizing Power Electronics Speaker: Marco Palma, Director of Motor Drive Systems and Applications

The latest ePower™ integrated circuits based on gallium nitride technology are revolutionizing Power Electronics applications such as dc-dc converters and motor drives as industrial drones, e-bikes, scooters, power tools. Gallium nitride technology has opened a new era in the world of power electronics because of a clear differentiation factor between GaN and silicon: medium voltage gallium nitride devices can be built on a planar technology while this is cost-prohibitive for silicon devices. Silicon devices are made on a vertical technology, making it physically impossible to have two power devices in the same chip. EPC’s GaN-on-Si planar technology allows the integration of the power section with the control in the same die. In 2014, EPC started the journey toward a power system-on-a-chip introducing a family of integrated devices comprised of multiple FETs on one chip. Practical examples of real applications with these integrated circuits will be shown at the PE International Conference.

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EEHE 2023

Tuesday, June 13, 2023 - Thursday, June 15, 2023
EEHE 2023
Location: Essen, Germany

High Power-Density, Bi-Directional, 48 V to 12 V Converter using eGaN® FETs for next generation BEV’s Speaker: : Michael de Rooij, Ph.D., Vice President of Applications Engineering

This work presents a high power-density LLC based system that addresses size, with a 23 mm x 18 mm x 10 mm volume, weighs just 15 grams and can deliver up to 750 W power for 12 V systems, with unrestricted voltage range from 11.0 V through 14.3 V, operating from a 48 V bus, with range of 36 V through 52 V.

Power Steering Application using eGaN Integrated Circuit Speaker: Marco Palma, Director of Motor Drive Systems and Applications

In motor drive applications, GaN inverters allow the increase of the PWM frequency and the drastic reduction of dead times, allowing the removal of bulky electrolytic capacitors and the reduction of overall solution dimensions. These benefits result in a reduction in size, weight, and material cost, over equivalent MOSFET-based designs. This work presents recent developments in employing GaN integrated circuit devices in a multiple-three-phase motor power steering application that requires 48V or 24V nominal voltage and up to 10 ARMS in each stator phase winding.

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