High Frequency Isolated Bus Converter with
Gallium Nitride Transistors and Integrated Transformer

  

ECCE 2012
September 15 – 20, 2012

"High Frequency Isolated Bus Converter with Gallium Nitride Transistors and Integrated Transformer"
Speakers: David Reusch, Fred C. Lee; Virginia Tech (CPES)
Location: Raleigh, NC
 

Abstract:
This paper will study the impact of increased switching frequencies on transformer size, the ability of eGaN transistors to increase switching frequency in high frequency resonant topologies, and propose an improved integrated transformer design that can decrease core loss and further improve the performance of traditional matrix transformers. The final demonstration being a Vin=48V, Vo=12V, 1.6MHz eGaN converter.