The data-driven world of cloud computing, wearables, machine learning, autonomous driving, and IoT is placing greater demands on data centers and power consumption. GaN FETs emerge as the solution for ultra-high efficiency power factor correction (PFC) rectifier designs, addressing the crucial factors of efficiency, power density, and cost in AC to DC switching power supplies.
In data center power supplies, Totem Pole PFC becomes a popular choice due to the Titanium 80+ efficiency requirements and the growing need for high power density. GaN technology's fast-switching capability enables higher power density while maintaining efficiency in PFC designs.
For the DC-DC stage following the PFC that converts the 400 V bus voltage to 48 V or 12 V, GaN FETs and ICs offer improved efficiency and reduced size. GaN FETs parallel better than their silicon counterparts for higher power and reliability. GaN FETs and ICs also offer outstanding thermal performance. GaN FETs excel in synchronous rectification circuits on the secondary side, offering:
EPC’s application team is constantly working on new reference designs. If there is a requirement not met by the listed boards, please contact us via Ask a GaN Expert to discuss your application further or visit our forum to share your questions with other engineers.
Half-bridge development boards are available for quick evaluation of most eGaN FETs and ICs.
WHITE PAPER: Low Cost and Low Profile 800 VDC to 12.5 V DC-DC Converter Using Low Voltage GaN in an ISOP Topology
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