EPC9005C : 40 V Half-Bridge Development Board
The EPC9005C development board is a 40 V maximum device voltage, 7 A maximum output current, half bridge with
onboard gate drives, featuring the EPC2014C enhancement mode (eGaN®) field effect transistor
(FET).
The purpose of this development board is to simplify the evaluation process of the EPC2014C eGaN FET by
including all the critical components on a single board that can be easily connected into any existing
converter.
Status: Obsolete
Fully assembled reference design developed for testing and performance
validation only, not available for sale.
For additional assistance, please contact a GaN
Expert.