EPC2015C - Enhancement Mode Power Transistor

VDS, 40 V
RDS(on), 4mΩ
ID, 53 A
Pulsed ID, 235 A
RoHS 6/6, Halogen Free

EPC2015C Enhancement Mode GaN Power Transistor
Die Size: 4.1 mm x 1.6 mm


  • DC-DC Converters
  • Industrial Automation
  • Synchronous Rectification
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio


  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: New Device Offered (NDO)
The GaN Experts recommend EPC2055 for new designsNDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
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