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EPC2020 - Enhancement Mode Power Transistor
V
DS
, 60 V
R
DS(on)
, 2.2 mΩ
I
D
, 90 A
Pulsed I
D
, 470 A
T
J
150°C
RoHS 6/6, Halogen Free
Die Size: 6.05 mm x 2.3 mm
Applications
DC-DC Converters
Motor Drive
Industrial Automation
Sync rectification for AC-DC & DC-DC
Inrush Protection
Class D Audio
Benefits
Higher Switching Frequency
– lower switching losses and lower drive power
Higher Efficiency
– lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint
- Higher power density
Lower R
DS(on)
- Higher current operation
Status:
New Device Offered (NDO)
The GaN Experts recommend
EPC2302
for new designs
NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
You may also be
interested in
Datasheet
EPC2020 Datasheet
Evaluation Boards
EPC9033
EPC9115
Quality & Reliability
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Materials Declaration
Design Resources
Application Notes
Assembling eGaN FETs
Quick Reference - Die Attach Procedure
Quick Reference - Die Removal Procedure
Using eGaN FETs
AN017: Fourth Generation eGaN FETs Widen the Performance Gap with the Aging MOSFET
Design Examples
Device Models
PSPICE (.net)
TSPICE (.sp)
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Altium Library (.zip)
Thermal Model
STEP
Related Videos
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®
FETs
Product Change Notice
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