EPC2029 - Enhancement Mode Power Transistor

VDS, 80 V
RDS(on), 3.2 mΩ
ID, 48 A
Pulsed ID, 360 A
RoHS 6/6, Halogen Free

EPC2029 Enhancement Mode GaN Power Transistor
Die Size: 4.6 mm x 2.6 mm



  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: New Device Offered (NDO)
The GaN Experts recommend EPC2065 for new designsNDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
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