EPC2030 - Enhancement Mode Power Transistor

VDS, 40 V
RDS(on), 2.4 mΩ
ID, 48 A
Pulsed ID, 490 A
RoHS 6/6, Halogen Free

EPC2030 Enhancement Mode GaN Power Transistor
Die Size: 4.6 mm x 2.6 mm


  • DC-DC Converters
  • Point-of-Load
  • Synchronous Rectification


  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: New Device Offered (NDO)
The GaN Experts recommend EPC2067 for new designsNDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
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