EPC2066: 40 V, 639 A Enhancement Mode GaN Power Transistor

VDS, 40 V
RDS(on), 1.1 mΩ
ID, 90 A
Pulsed ID, 639 A

EPC2066 Enhancement Mode GaN Power Transistor
Die Size: 6.05 mm x 2.3 mm

Applications

  • High density DC-DC conversion
  • BLDC motor drives
  • Industrial automation
  • Point-of-load converters
  • Synchronous rectification
  • Inrush protection

Benefits

  • Ultra-high efficiency
  • High switching frequency
  • Very low RDS(on), QG, QGD, QOSS and zero reverse recovery (QRR)
  • Small footprint
Status: Preferred
Buy Now

Find Distributor
Request Quote
Ask and EPC Engineer a Question FAQ

Have a question about EPC eGaN FETs and ICs?
Ask a GaN Expert

Datasheet

Demo/Development Boards

Start your design today with these low cost evaluation options:

EPC90149 40 V, 40 A half-bridge evaluation $200.00
EPC9174 1.2 Kw LLC 1/8th Brick, 48 V - 12 V $780.00

Quality & Reliability

Design Resources

Application Notes

Device Models

Export Classification

EAR99