EPC2069: 40 V, 422 A Enhancement Mode Power Transistor

V_DS, 40 V
R_DS(on), 2.25 mΩ
I_D, 80 A
Pulsed I_D, 422 A

Die Size: 3.25 mm x 3.25 mm

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Preferred

Start your design today with these low cost evaluation options:

40 V, 40 A half-bridge evaluation

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