EPC2069: 40 V, 422 A Enhancement Mode Power Transistor

V_DS, 40 V
R_DS(on), 2.25 mΩ
I_D, 80 A
Pulsed I_D, 422 A

EPC2069 Enhancement Mode GaN Power Transistor

Die Size: 3.25 mm x 3.25 mm

Applications

DC-DC Converters
BLDC Motor Drives
Sync Rectification for AC/DC and DC-DC
Lidar/Pulsed Power
Class-D Audio
LED Lighting

Benefits

Higher Switching Frequency – Lower switching losses and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: New Device Offered (NDO)
The GaN Experts recommend EPC2067 for new designsNDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.