EPC2070 - Enhancement Mode Power Transistor

VDS, 100 V
RDS(on), 23 mΩ
ID, 1.7 A
Pulsed ID, 34 A

EPC2070 Enhancement Mode GaN Power Transistor
Die Size: 1.3 mm x 0.85 mm


  • High-frequency DC-DC Converters
  • ToF module using VCSEL laser for camera modules, laptops, and smart phones
  • Lidar/Pulsed Power
  • Low inductance motor drives
  • Class-D Audio
  • LED Lighting


  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Preferred
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