EPC2103: Enhancement Mode GaN Power Transistor Half Bridge

V_DS, 80 V
R_DS(on), 5.5 mΩ
I_D, 30 A
Pulsed I_D, 195 A
RoHS 6/6, Halogen Free

Die Size: 6.05 mm x 2.3 mm

Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
Smaller Footprint - Higher power density

Status: Preferred

Start your design today with these low cost evaluation options:

80 V, 17 A half-bridge evaluation

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