EPC2103: Enhancement Mode GaN Power Transistor Half Bridge

VDS, 80 V
RDS(on), 5.5 mΩ
ID, 30 A
Pulsed ID, 195 A
RoHS 6/6, Halogen Free

EPC2103 Enhancement Mode GaN Power Transistor
Die Size: 6.05 mm x 2.3 mm


  • DC-DC Converters
  • BLDC Motor Drives


  • Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Preferred

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