EPC2107 - Enhancement Mode GaN Power Transistor Half Bridge
with Integrated Synchronous Bootstrap

VDS, 100 V
RDS(on), 390 mΩ (Q1 & Q2),
3.3 Ω (Q3)
ID, 1.7 A (Q1 & Q2),
0.5 A (Q3)
Pulsed ID, 3.8 A (Q1 & Q2),
0.5 A (Q3)
RoHS 6/6, Halogen Free

EPC2107 Enhancement Mode GaN Power Transistor
Die Size: 1.35 mm x 1.35 mm

Applications

  • High Frequency DC-DC Conversion
  • Class-D Audio
  • Wireless Power (Highly Resonant and Inductive)

Benefits

  • Higher Switching Frequency – Lower switching losses, lower parasitic inductance, and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Active

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