EPC2815 - Enhancement Mode Power Transistor

VDS, 40 V
RDS(on), 4 mΩ
ID, 33 A
High Lead Bump
Finish: 95%Pb/5%Sn

EPC2815 Enhancement Mode GaN Power Transistor
Die Size: 4.1 mm x 1.6 mm

Applications

  • High Speed DC-DC Conversion
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio

Benefits

  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Device is Obsolete
Contact us at [email protected].
For the lead free version of this device, please see EPC2001C
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Datasheet

Evaluation Boards

Quality & Reliability

Design Resources

Application Notes

Design Examples

Device Models

EPC2015 models are parametrically representative for EPC2815

Product Change Notice

 
 
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