Thirty years of silicon power-MOSFET development taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principal has guided the design of EPC’s enhancement mode Gallium Nitride transistors. EPC offers a wide range of product training material to assist our customers’ to extract the full capabilities of the eGaN FETs in their designs. We will continue to add new documents to this knowledge base on a regular basis.
Gate Drive and Dead-Time Management
Measurement and Simulation