eGaN® devices have been in volume production since March 2010 and have demonstrated very high reliability in both laboratory testing and high-volume customer applications.
eGaN devices have a remarkable field reliability record.
EPC has undertaken extensive reliability testing to continue the understanding of the behavior of Gallium Nitride devices over a wide range of stress conditions.
The results of these reliability studies show that GaN is an extremely robust technology that continues to improve at a rapid pace.
EPC is committed to subjecting GaN devices to rigid reliability standards and sharing the results with the power conversion industry. We continue to add new documents to this knowledge base regularly.
Expands GaN lifetime models, adds gate/drain overvoltage data, pulsed current ratings, and mission-specific reliability for solar, DC-DC, and LiDAR applications.
Download Phase 17 Reliability Report
Documents continued work using test-to-fail methodology and adds specific reliability metrics and predictions for solar optimizers, lidar sensors, and DC-DC converters.
Download Phase 15 Reliability Report
Discusses intrinsic failure mechanisms impacting the gate electrode and dynamic RDS(on), and examines safe operating area and short-circuit robustness testing.
Download Phase 11 Reliability Report
Covers AEC-Q101 qualification of eGaN automotive FETs and provides failure statistics for a wide range of gate bias and temperature conditions.
Download Phase 10 Reliability Report
Continues the evaluation of eGaN FETs, focusing on their robustness under different stress conditions and updating failure rate predictions based on accelerated testing. Focus on field reliability experience of GaN devices.
Download Phase 8 Reliability Report
Provides further insights into the reliability of eGaN devices, including failure rate predictions and the impact of various stressors on device performance.
Download Phase 7 Reliability Report
Presents qualification testing of eGaN FETs under a wide variety of stress conditions, including high-temperature reverse bias and high-temperature gate bias, and reports on failure rate predictions using acceleration factors derived from operating devices beyond normal conditions.
Download Phase 6 Reliability Report
Investigates the effects of humidity and temperature cycling on eGaN devices, providing insights into their performance in varying environmental conditions.
Download Phase 4 Reliability Report
Focuses on long-term reliability assessments, including high-temperature operating life tests and evaluations of device performance over extended periods.
Download Phase 3 Reliability Report
Expands on initial findings, presenting further data on the robustness of eGaN devices under various electrical and environmental stress conditions including HTRB, HTGB, TC, THB, operating lify, HBM and MM ESD testing.
Download Phase 2 Reliability Report
Introduces EPC's initial reliability testing of enhancement-mode GaN transistors, demonstrating their suitability for commercial applications through extensive stress tests.
Download Phase 1 Reliability Report