EPC’s eGaN FETs give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to improve system efficiency, reduce system cost, reduce size, or a combination of all three. Many new applications are enabled by EPC’s enhancement mode Gallium Nitride devices due to a quantum leap in frequency capability coupled with high voltage and low on-resistance. Devices made with this technology are similar to a power MOSFET and therefore easy to use, but subtle differences need to be understood for the designer to extract the full capability of these leading-edge transistors. EPC has written several articles on applying eGaN FETs and we will continue to add to this knowledge base on a regular basis.

• eGaN Shootout: Part 1 – Comparing Figure of Merit
• White Paper: eGaN FET Drivers and Layout Considerations
• Gate drive design for eGaN FETs
• Using eGaN FETs
• White Paper: Impact of Parasitics on Performance
• White Paper: Optimizing PCB Layout with eGaN FETs
• eGaN Parametric Characterization Guide
• Characterizing High Power Semiconductors Requires New Technologies
• Test Equipment Must Keep Pace with New High Power Semiconductor Developments
• Visual Characterization Guide
• Thermal Performance of eGaN FETs
• Characteristics of Second Generation eGaN FETs
• Circuit Simulation Using Device Models
• White Paper : Paralleling eGaN FETs
• eGaN® FET Safe Operating Area
• Gallium Nitride Transistor Packaging Advances and Thermal Modeling
• White Paper: Selecting eGaN FET Optimal On-Resistance
• White Paper: Dead-Time Optimization for Maximum Efficiency