EPC9003C - Development Board

EPC9003C : 200 V Half-Bridge Development Board

The EPC9003C development board has a 200 V maximum device voltage, 5 A maximum output current, in a half-bridge topology with onboard gate drives, featuring the EPC2010C enhancement-mode (eGaN®) field effect transistor (FET)

The purpose of this development board is to simplify the evaluation process of the EPC2010C eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

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EPC9003C Waveforms
Waveforms for EPC9003C operation as a 170 V to 5 V / 5 A (100 kHz) buck converter
CH1: PWM Input – CH4: (VOUT) Switch node voltage
EPC9003C Parameters Table
* Assumes inductive load, maximum current depends on die temperature – actual maximum current will be subject to switching frequency, bus voltage and thermal cooling.
# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.