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LM5114 Texas Instruments
Low Side Gate Driver


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LM5113 Texas Instruments
Announces Industry First
eGaN FET Driver


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eGaN® FET

Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs can increase the performance of applications currently using standard MOSFET products and enable applications that were not achievable with silicon-based FET technology.

For more information on EPC’s GaN technology download our Technology Brief

For more information on the EPC8000 series eGaN FETs with performance capable of amplification into the low GHz range download the technology brief eGaN® FETs for Ultra-High Frequency Power Conversion

Part
Number
 Package (mm) VDSMax
RDS(ON)
(mΩ)
@5VGS
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
QRR
(nC)
CISS
(pF)
COSS
(pF)
CRSS
(pF)
ID(A)RoHS
6/6
Buy
eGaN
FETs
EPC2023LGA 6.1x2.3 301.3205.81.9280230013005660
EPC2024LGA 6.1x2.3 401.5196.42320210012004460
EPC2015LGA 4.1x1.640410.53.02.218.5011005756033
EPC2815LGA 4.1x1.640410.53.02.218.5011005756033
EPC2014LGA 1.7x1.140162.50.670.484.8030015010.210
EPC8004LGA 2.1x0.85401250.3580.1100.0310.493045170.44.4Contact EPC
EPC8007LGA 2.1x0.85401600.3020.0970.0250.406039140.33.8Contact EPC
EPC8008LGA 2.1x0.85403250.1770.0670.0120.21102580.22.7Contact EPC
EPC2020LGA 6.1x2.3 602165.02420180011003160
EPC8009LGA 2.1x0.85651380.3800.1160.0360.769047170.44.1
EPC8005LGA 2.1x0.85652750.2180.0770.0180.4140299.70.22.9
EPC8002LGA 2.1x0.85655300.1410.0590.0090.2440215.90.12*
EPC2021LGA 6.1x2.3 802.5153.82.1560170010002460
EPC2022LGA 6.1x2.3 1003.2133.7262015009401860
EPC2001LGA 4.1x1.610078.02.32.23508504502025
EPC2801LGA 4.1x1.610078.02.32.23508504502025
EPC2016LGA 2.1x1.6100163.80.990.72004332254.311
EPC2007LGA 1.7x1.1100302.10.520.6110.202051186.66
EPC8010LGA 2.1x0.851001600.3540.1090.0321.509047180.23.4
EPC8003LGA 2.1x0.851003000.3150.1100.0341.1038180.22.5
EPC2018LGA 3.6x1.6150255.01.31.74004802709.212
EPC2818LGA 3.6x1.6150255.01.31.74004802709.212
EPC2010LGA 3.6x1.6200255.01.31.74004802709.212
EPC2019LGA 2.8x0.952004320.60.331702301100.99
EPC2012LGA 1.7x0.92001001.50.330.57110128733.33
* Device limitation

Click on Part Number to access product details and datasheet.

For guidance on assembly techniques click here for more information.

 

EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs.