zh-CNja-JP

eGaN® FETs and ICs

Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs can increase the performance of applications currently using standard MOSFET products and enable applications that were not achievable with silicon-based FET technology. GaN integrated circuits further widen the efficiency gap between eGaN technology and traditional silicon. eGaN IC’s save space, improve efficiency, increase manufacturing efficiencies, and lower system costs.

For more information on EPC’s GaN technology download our Technology Brief

Click on Part Number to access product details and datasheet.

For guidance on assembly techniques click here for more information.

 

EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs.