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LM5114 Texas Instruments
Low Side Gate Driver


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LM5113 Texas Instruments
Announces Industry First
eGaN FET Driver


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Ultra High Frequency eGaN FETs

High performance eGaN FETs capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon. (Download Technology Brief)

Part
Number
VDSMax.
RDS(ON)
(mΩ)@5V
ID(A)Pulsed ID
(A)
QG
(pC)
Typ.
QGD
(pC)
Typ.
QGS
(pC)
Typ.
QOSS
Typ.
QRR
Typ.
CISS
Typ.(pF)
COSS
Typ.(pF)
CRSS
Typ.(pF)
RoHS
6/6
and
Halogen
Free
Buy
eGaN
FETs
EPC8004401254.47.535831.011049304517.00.4Contact EPC
EPC8007401603.86.030225.09740603914.00.3Contact EPC
EPC8008403252.72.917712.0672110258.00.2Contact EPC
EPC8009651384.17.538036.011676904717.00.4
EPC8005652752.93.821818.0774140299.70.2
EPC8002655302*2.01419.4592440215.90.1
EPC80101001603.47.535432.01091,50904718.00.2
EPC80031003002.55.031534.01101,10003818.00.2
* Device limitation

EPC eGaN® FETs provide RDS(ON) x QG FOM advances over state of the art silicon MOSFETs of 5x to 10x depending on breakdown voltage. (Download eGaN FET Product Brief)

January 2013: Datasheets EPC2001, EPC2007, EPC2014, & EPC2015 updated with extended pulsed VDS capabilities
Part
Number
Package (mm)ChVdsVgsMax.
Rdson
(mO)
@5V
Qg
@5V
(nC)
Typ.
Qgs
(nC)
Typ.
Qgd
(nC)
Typ.
Rg
Typ.
Vth
Typ.
QrrIdTJ(MAX)
(°C)
RoHS
6/6
and
Halogen
Free
Buy
eGaN
FETs
EPC2015LGA 4.1x1.6N4064.010.53.02.20.61.4033150
EPC2815LGA 4.1x1.6N4064.010.53.02.20.61.4033150
EPC2014LGA 1.7x1.1N40616.02.50.670.480.61.4010150
EPC2001LGA 4.1x1.6N10067.08.02.32.20.61.4025125
EPC2801LGA 4.1x1.6N10067.08.02.32.20.61.4025125
EPC2016LGA 2.1x1.6N100616.03.80.990.70.61.4011125
EPC2007LGA 1.7x1.1N100630.02.10.50.60.61.406125
EPC2018LGA 3.6x1.6N150625.05.01.31.70.61.4012125
EPC2818LGA 3.6x1.6N150625.05.01.31.70.61.4012125
EPC2010LGA 3.6x1.6N200625.05.01.31.70.61.4012125
EPC2012LGA 1.7x0.9N2006100.01.50.330.570.61.403125

Click on Part Number to access product details and datasheet.

Lead Free Users – EPC’s RoHS compliant eGaN® FETs have several performance improvements. Click here for more details.

For guidance on assembly techniques click here for more information.

 

EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs.