Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs can increase the performance of applications currently using standard MOSFET products and enable applications that were not achievable with silicon-based FET technology. GaN integrated circuits further widen the efficiency gap between eGaN technology and traditional silicon. eGaN IC’s save space, improve efficiency, increase manufacturing efficiencies, and lower system costs.
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EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs.