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Integrated GaN Power

Enhancement mode monolithic half-bridge GaN transistors further widen the efficiency gap between eGaN® technology and traditional silicon. Monolithic half-bridge devices save space, improve efficiency, and lower system costs.

For more information on EPC’s GaN technology download our Technology Brief

Part
Number
ConfigurationVDSMax
RDS(ON)
(mΩ)
@5VGS
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
QRR
(nC)
ID(A) Package (mm) RoHS
6/6
Buy
eGaN
FETs
EPC2100Dual
Asymmetric
308
2
3.5
15
1.4
4.6
0.57
2.6
5.5
28
09.5
38
LGA 6.1x2.3
EPC2101Dual Asymmetric6011.5
2.7
2.7
12
1
3.7
0.50
2.5
9
45
09.5
38
LGA 6.1x2.3
EPC2105Dual Asymmetric8014.5
3.5
2.5
10
1
3.2
0.50
2
11
55
09.5
38
LGA 6.1x2.3

eGaN® FETs

Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs can increase the performance of applications currently using standard MOSFET products and enable applications that were not achievable with silicon-based FET technology.

For more information on EPC’s GaN technology download our Technology Brief

For more information on the EPC8000 series eGaN FETs with performance capable of amplification into the low GHz range download the technology brief eGaN® FETs for Ultra-High Frequency Power Conversion

Part
Number
ConfigurationVDSMax
RDS(ON)
(mΩ)
@5VGS
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
QRR
(nC)
ID(A) Package (mm) RoHS
6/6
Buy
eGaN
FETs
EPC2023Single301.3205.81.928060LGA 6.1x2.3
EPC2024Single401.5196.4232060LGA 6.1x2.3
EPC2015Single40410.53.02.218.5033LGA 4.1x1.6
EPC2815Single40410.53.02.218.5033LGA 4.1x1.6
EPC2014Single40162.50.670.484.8010LGA 1.7x1.1
EPC8004Single401100.3700.1200.0470.6302.7LGA 2.1x0.85Contact EPC
EPC8007Single401600.3020.0970.0250.40602.7LGA 2.1x0.85Contact EPC
EPC8008Single403250.1770.0670.0120.21102.7LGA 2.1x0.85Contact EPC
EPC2020Single602165.0242060LGA 6.1x2.3
EPC8009Single651300.3700.1200.0550.9402.7LGA 2.1x0.85
EPC8005Single652750.2180.0770.0180.41402.7LGA 2.1x0.85
EPC8002Single655300.1410.0590.0090.24402LGA 2.1x0.85
EPC2021Single802.5153.82.156060LGA 6.1x2.3
EPC2022Single1003.2133.7262060LGA 6.1x2.3
EPC2001Single10078.02.32.235025LGA 4.1x1.6
EPC2801Single10078.02.32.235025LGA 4.1x1.6
EPC2016Single100163.80.990.720011LGA 2.1x1.6
EPC2007Single100302.10.520.6110.206LGA 1.7x1.1
EPC8010Single1001600.3540.1090.0321.50902.7LGA 2.1x0.85
EPC8003Single1003000.3150.1100.0341.102.7LGA 2.1x0.85
EPC2018Single150255.01.31.740012LGA 3.6x1.6
EPC2818Single150255.01.31.740012LGA 3.6x1.6
EPC2010Single200255.01.31.740012LGA 3.6x1.6
EPC2019Single2004320.60.331709LGA 2.8x0.95
EPC2012Single2001001.50.330.571103LGA 1.7x0.9
EPC2025Single3001501.90.610.302004LGA 1.95 x 1.95

Click on Part Number to access product details and datasheet.

For guidance on assembly techniques click here for more information.

 

EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs.