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LM5114 Texas Instruments
Low Side Gate Driver

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LM5113 Texas Instruments
Announces Industry First
eGaN FET Driver

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eGaN FETs

EPC eGaN® FETs provide R_DS(ON) x Q_G FOM advances over state of the art silicon MOSFETs of 5x to 10x depending on breakdown voltage. (Download eGaN FET Product Brief)

Part Number	Package (mm)	Ch	Vds	Vgs	Max. Rdson (mO) @5V	Qg @5V Typ.	Qgs Typ.	Qgd Typ.	Rg Typ.	Vth Typ.	Id	T_J(MAX) (°C)
EPC2015	LGA 4.1x1.6	N	40	6	4.0	10.5	3.0	2.2	0.6	1.4	33	150
EPC2014	LGA 1.7x1.1	N	40	6	16.0	2.5	0.67	0.48	0.6	1.4	10	150
EPC2001	LGA 4.1x1.6	N	100	6	7.0	8.0	2.3	2.2	0.6	1.4	25	125
EPC2007	LGA 1.7x1.1	N	100	6	30.0	2.1	0.5	0.6	0.6	1.4	6	125
EPC2010	LGA 3.6x1.6	N	200	6	25.0	5.0	1.3	1.7	0.6	1.4	12	125
EPC2012	LGA 1.7x0.9	N	200	6	100.0	1.5	0.33	0.57	0.6	1.4	3	125
EPC1015	LGA 4.1x1.6	N	40	6	4.0	11.5	4.0	2.2	0.6	1.4	33	125
EPC1014	LGA 1.7x1.1	N	40	6	16.0	3.0	1.0	0.6	0.6	1.4	10	125
EPC1005	LGA 4.1x1.6	N	60	6	7.0	10.0	2.9	2.7	0.6	1.4	25	125
EPC1009	LGA 1.7x1.1	N	60	6	30.0	2.5	0.7	0.8	0.6	1.4	6	125
EPC1001	LGA 4.1x1.6	N	100	6	7.0	11.0	2.9	3.7	0.6	1.4	25	125
EPC1007	LGA 1.7x1.1	N	100	6	30.0	2.7	0.7	1.0	0.6	1.4	6	125
EPC1011	LGA 3.6x1.6	N	150	6	25.0	6.7	1.4	2.7	0.6	1.4	12	125
EPC1013	LGA 1.7x0.9	N	150	6	100.0	1.7	0.3	0.7	0.6	1.4	3	125
EPC1010	LGA 3.6x1.6	N	200	6	25.0	7.5	1.4	3.5	0.6	1.4	12	125
EPC1012	LGA 1.7x0.9	N	200	6	100.0	1.9	0.9	0.3	0.6	1.4	3	125

Click on Part Number to access product details and datasheet.

Lead Free Users – EPC’s RoHS compliant eGaN® FETs have several performance improvements. Click here for more details.

For guidance on assembly techniques click here for more information.

EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs.