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LM5114 Texas Instruments
Low Side Gate Driver


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LM5113 Texas Instruments
Announces Industry First
eGaN FET Driver


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eGaN® FETs

Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs can increase the performance of applications currently using standard MOSFET products and enable applications that were not achievable with silicon-based FET technology.

For more information on EPC’s GaN technology download our Technology Brief

For more information on the EPC8000 series eGaN FETs with performance capable of amplification into the low GHz range download the technology brief eGaN® FETs for Ultra-High Frequency Power Conversion

Part
Number
ConfigurationVDSMax
RDS(ON)
(mΩ)
@5VGS
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
QRR
(nC)
ID(A) Package (mm) RoHS
6/6
Buy
eGaN
FETs
EPC2023Single301.3205.81.928060LGA 6.1x2.3
EPC2100Dual
Asymmetric
308
2
3.5
15
1.4
4.6
0.57
2.6
5.5
28
010
40
LGA 6.1x2.3
EPC2024Single401.5196.4232060LGA 6.1x2.3
EPC2015Single40410.53.02.218.5033LGA 4.1x1.6
EPC2815Single40410.53.02.218.5033LGA 4.1x1.6
EPC2014Single40162.50.670.484.8010LGA 1.7x1.1
EPC8004Single401100.3700.1200.0470.6302.7LGA 2.1x0.85Contact EPC
EPC8007Single401600.3020.0970.0250.40602.7LGA 2.1x0.85Contact EPC
EPC8008Single403250.1770.0670.0120.21102.7LGA 2.1x0.85Contact EPC
EPC2020Single602165.0242060LGA 6.1x2.3
EPC8009Single651300.3700.1200.0550.9402.7LGA 2.1x0.85
EPC8005Single652750.2180.0770.0180.41402.7LGA 2.1x0.85
EPC8002Single655300.1410.0590.0090.24402*LGA 2.1x0.85
EPC2021Single802.5153.82.156060LGA 6.1x2.3
EPC2022Single1003.2133.7262060LGA 6.1x2.3
EPC2001Single10078.02.32.235025LGA 4.1x1.6
EPC2801Single10078.02.32.235025LGA 4.1x1.6
EPC2016Single100163.80.990.720011LGA 2.1x1.6
EPC2007Single100302.10.520.6110.206LGA 1.7x1.1
EPC8010Single1001600.3540.1090.0321.50902.7LGA 2.1x0.85
EPC8003Single1003000.3150.1100.0341.102.7LGA 2.1x0.85
EPC2018Single150255.01.31.740012LGA 3.6x1.6
EPC2818Single150255.01.31.740012LGA 3.6x1.6
EPC2010Single200255.01.31.740012LGA 3.6x1.6
EPC2019Single2004320.60.331709LGA 2.8x0.95
EPC2012Single2001001.50.330.571103LGA 1.7x0.9
EPC2025Single3001501.90.610.302004LGA 1.95 x 1.95
* Device limitation

Click on Part Number to access product details and datasheet.

For guidance on assembly techniques click here for more information.

 

EPC has developed the world’s first enhancement mode Gallium Nitride devices to be offered on the market. Our eGaN FETs provide designers employing any power conversion topology; full bridge, half bridge, buck converter, boost converter, PFC, flyback converter, forward converter, or LLC converter the opportunity to achieve significant performance enhancements compared with silicon power MOSFETs.