EPC2010C - Enhancement Mode Power Transistor

VDS, 200 V
RDS(on), 25 mΩ
ID, 22 A
Pulsed ID, 90 A
RoHS 6/6,
Halogen Free

EPC2010C Enhancement Mode GaN Power Transistor
Die Size: 3.6 mm x 1.6 mm

Applications

  • High Frequency DC-DC Conversion
  • Industrial Automation
  • Synchronous Rectification
  • High Frequency Hard Switching and Soft Switching
  • Class D Audio
  • LiDAR/Pulsed Power Applications

Benefits

  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Production
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