EPC2012 - Enhancement Mode Power Transistor

VDS, 200 V
RDS(on), 100 mΩ
ID, 3 A
RoHS 6/6, Halogen Free

EPC2012 Enhancement Mode GaN Power Transistor
Die Size: 1.7 mm x 0.9 mm

Applications

  • High Speed DC-DC Conversion
  • High Frequency Hard Switching and Soft Switching
  • Pulsed Current Applications

Benefits

  • Higher Switching Frequency – lower switching losses and lower drive power
  • Higher Efficiency – lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Not recommended for new designs
Use EPC2012C for new designs