EPC2051: 100 V, 37 A Enhancement-Mode GaN Power Transistor

VDS, 100 V
RDS(on), 25 mΩ
ID, 1.7 A
Pulsed ID, 37 A
RoHS 6/6, Halogen Free

EPC2051 Enhancement Mode GaN Power Transistor
Die Size: 1.3 mm x 0.85 mm


  • Open Rack Server Architectures (48 VIN)
  • LiDAR/Pulsed Power Applications
  • Power Supplies
  • Class D Audio
  • LED Lighting
  • Low Inductance Motor Drives


  • Higher Switching Frequency – Lower switching losses and lower drive power
  • Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
  • Smaller Footprint - Higher power density
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are products that EPC is preparing for production release. Specifications may change on final production release of the device. If you have questions please contact us.