EPC2112: 200 V, 10 A Integrated Gate Driver eGaN® IC

Integrated Gate Driver

  • Low Propagation Delay
  • Up to 7 MHz Operation
  • Operates from 5 V Supply

200 V, 40 mΩ eGaN FET
Low Inductance BGA

EPC2112 Gallium Nitride GaN Integrated Circuit
Die Size: 2.9 mm x 1.1 mm

Applications

  • Wireless Power
  • High Frequency DC-DC Conversion
EPC2112 Schematic
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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